Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Takenori Osada"'
Autor:
Takeshi Aoki, Noboru Fukuhara, Takenori Osada, Hiroyuki Sazawa, Masahiko Hata, Takayuki Inoue
Publikováno v:
AIP Advances, Vol 5, Iss 8, Pp 087149-087149-14 (2015)
This paper presents a compressive study on the fabrication and optimization of GaAs metal–oxide–semiconductor (MOS) structures comprising a Al2O3 gate oxide, deposited via atomic layer deposition (ALD), with an AlN interfacial passivation layer p
Externí odkaz:
https://doaj.org/article/a0fb5547d0584824b327835b70c42ec1
Autor:
Noboru Fukuhara, Fumimasa Horikiri, Taiki Yamamoto, Takenori Osada, Kenji Kasahara, Takayuki Inoue, Takashi Egawa
Publikováno v:
Journal of Applied Physics. 133:085702
The frequency dispersion in admittance measurements in AlGaN/GaN high-electron-mobility transistors, which is typically interpreted to result from an interface trap density Dit, is also known to be caused by effects other than Dit. To study the origi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::632ce9bfbb7074e77441b1444d3f37e7
https://doi.org/10.1063/5.0127499
https://doi.org/10.1063/5.0127499
Publikováno v:
Applied Physics Letters. 121:092901
Potassium sodium niobate [(K,Na)NbO3, KNN] films are promising lead-free piezoelectric materials for microelectromechanical systems (MEMS) devices. We previously developed technologies for forming high-quality KNN films by sputtering, which showed ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::788361e12e0e14348b2820ec0e11349a
https://doi.org/10.1063/5.0104583
https://doi.org/10.1063/5.0104583
Autor:
Yuichi Hiroyama, Tomoyuki Takada, Takashi Egawa, Keitaro Ikejiri, Takenori Osada, Chihiro Hirooka, Kasahara Kenji, Mitsuhiro Tanaka
Publikováno v:
Semiconductor Science and Technology. 36:014004
Mass production-ready technologies of AlGaN/AlN/GaN high-electron-mobility transistor (HEMT) structures on 200 mm diameter silicon substrates are developed using a large-scale metal-organic chemical vapor deposition system. High-yield epitaxial subst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3358beee77815e6a9f8e3d996693efd
https://doi.org/10.1088/1361-6641/abc3da
https://doi.org/10.1088/1361-6641/abc3da
Autor:
Rui Zhang, Tatsuro Maeda, Shinichi Takagi, Xiao Yu, Masahiko Hata, Takenori Osada, Mitsuru Takenaka, Jian Kang, Taro Itatani
Publikováno v:
ECS Solid State Letters. 4:P15-P18
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3ff098ef17c6232823ccd01b2dfc779
https://doi.org/10.1149/2.0031502ssl
https://doi.org/10.1149/2.0031502ssl
Publikováno v:
Thin Solid Films. 557:342-345
We have characterized photonic-wire waveguides with Si/SiGe/Si heterostructure ribs for Si-based optical modulators. The Si (80 nm)/Si0.72Ge0.28 (40 nm) layers grown on Si-on-insulator by molecular beam epitaxy for optical modulators were evaluated b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d77e7e53d3ce20cc13c127f1b8d3ecad
https://doi.org/10.1016/j.tsf.2013.10.063
https://doi.org/10.1016/j.tsf.2013.10.063
Autor:
Osamu Ichikawa, Takenori Osada, Shinichi Takagi, Masahiko Hata, Ryosho Nakane, Masafumi Yokoyama, Mitsuru Takenaka, Sanghyeon Kim
Publikováno v:
IEEE Transactions on Electron Devices. 60:3342-3350
We have systematically analyzed the components of source/drain (S/D) resistance (RSD) in InGaAs n-MOSFETs with Ni-InGaAs metal S/D. It is found that Ni-InGaAs has a low resistivity of ~250 μΩ·cm in a thickness of Ni-InGaAs (TNi-InGaAs) of down to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d588a470fec26a8494ce70634f328d4a
https://doi.org/10.1109/ted.2013.2279363
https://doi.org/10.1109/ted.2013.2279363
Autor:
Tatsuro Maeda, Masahiko Hata, Takeshi Aoki, Taketsugu Yamamoto, Hiroyuki Ishii, Osamu Ichikawa, Takenori Osada, Eiko Mieda, Tomoyuki Takada, Wipakorn Jevasuwan, Tetsuji Yasuda, Taro Itatani, Yuichi Kurashima, Hideki Takagi
Publikováno v:
Microelectronic Engineering. 109:133-136
We have developed the transfer technology of thin post-silicon materials by utilizing high quality heteroepitaxial growth. The single crystal Germanium layer transfer with epitaxial lift-off (ELO) technique on arbitrary substrates has been demonstrat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a323c086082056a875bb3ca0bbd088a
https://doi.org/10.1016/j.mee.2013.03.069
https://doi.org/10.1016/j.mee.2013.03.069
Publikováno v:
Microelectronic Engineering. 109:266-269
Al2O3 interlayer with plasma post-nitridation can reduce Dit of HfO2/Al2O3/SiGe.Dit toward valance band is decreased by this method, compared with HfO2/SiGe MOS.There is an universal relationship between the Dit and ΔEOT by post-nitridation.0.28-nm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe20be9f5180593a1648bebfd81c6482
https://doi.org/10.1016/j.mee.2013.03.013
https://doi.org/10.1016/j.mee.2013.03.013
Autor:
Takenori Osada, Mitsuru Takenaka, Yuki Ikku, Shinichi Takagi, Yongpeng Cheng, Masahiko Hata, Osamu Ichikawa
Publikováno v:
26th International Conference on Indium Phosphide and Related Materials (IPRM).
Low-dark-current InGaAs metal-semiconductor-metal (MSM) photodetectors monolithically integrated with InP photonic-wire waveguides are fabricated on III-V CMOS photonics platform. By using the Schottky barrier enhancement layer consisting of the InP/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c0ee9ab284fbeac08b2bce2521b16cd
https://doi.org/10.1109/iciprm.2014.6880578
https://doi.org/10.1109/iciprm.2014.6880578