Zobrazeno 1 - 10
of 463
pro vyhledávání: '"Takenobu, Taishi"'
Autor:
Ohnishi, Kosuke, Aoki, Motomi, Ohshima, Ryo, Shigematsu, Ei, Ando, Yuichiro, Takenobu, Taishi, Shiraishi, Masashi
Topological quantum materials (TQMs) possess abundant and attractive spin physics, and a Weyl semimetal is the representative material because of the generation of spin polarization that is available for spin devices due to fictitious Weyl monopoles
Externí odkaz:
http://arxiv.org/abs/2208.10686
Akademický článek
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Autor:
Kawasugi, Yoshitaka, Seki, Kazuhiro, Pu, Jiang, Takenobu, Taishi, Yunoki, Seiji, Yamamoto, Hiroshi M., Kato, Reizo
High-$T_{\rm C}$ superconductors show anomalous transport properties in their normal states, such as the bad-metal and pseudogap behaviors. To discuss their origins, it is important to speculate whether these behaviors are material-dependent or unive
Externí odkaz:
http://arxiv.org/abs/1909.03782
Autor:
Kawasugi, Yoshitaka, Seki, Kazuhiro, Tajima, Satoshi, Pu, Jiang, Takenobu, Taishi, Yunoki, Seiji, Yamamoto, Hiroshi M., Kato, Reizo
A Mott insulator sometimes induces unconventional superconductivity in its neighbors when doped and/or pressurized. Because the phase diagram should be strongly related to the microscopic mechanism of the superconductivity, it is important to obtain
Externí odkaz:
http://arxiv.org/abs/1905.04402
Akademický článek
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K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Kozawa, Daichi, Pu, Jiang, Shimizu, Ryo, Kimura, Shota, Chiu, Ming-Hui, Matsuki, Keiichiro, Wada, Yoshifumi, Sakanoue, Tomo, Iwasa, Yoshihiro, Li, Lain-Jong, Takenobu, Taishi
Publikováno v:
Appl. Phys. Lett. 109, 201107 (2016)
Transition metal dichalcogenide (TMDC) monolayers have attracted much attention due to their strong light absorption and excellent electronic properties. These advantages make this type of two-dimensional crystal a promising one for optoelectronic de
Externí odkaz:
http://arxiv.org/abs/1611.01589
Autor:
Kawasugi, Yoshitaka, Seki, Kazuhiro, Edagawa, Yusuke, Sato, Yoshiaki, Pu, Jiang, Takenobu, Taishi, Yunoki, Seiji, Yamamoto, Hiroshi M., Kato, Reizo
It is widely recognised that the effect of doping into a Mott insulator is complicated and unpredictable, as can be seen by examining the Hall coefficient in high $T_{\rm c}$ cuprates. The doping effect, including the electron-hole doping asymmetry,
Externí odkaz:
http://arxiv.org/abs/1606.09311
Autor:
Tsuboi, Yuka, Wang, Feijiu, Kozawa, Daichi, Funahashi, Kazuma, Mouri, Shinichiro, Miyauchi, Yuhei, Takenobu, Taishi, Matsuda, Kazunari
Atomically thin layered materials such as graphene and transition-metal dichalcogenides exhibit great potential as active materials in optoelectronic devices because of their high carrier-transporting properties and strong light-matter interactions.
Externí odkaz:
http://arxiv.org/abs/1503.05380
Autor:
Chu, Leiqiang, Schmidt, Hennrik, Pu, Jiang, Wang, Shunfeng, Özyilmaz, Barbaros, Takenobu, Taishi, Eda, Goki
Publikováno v:
Scientific Reports 4, 7293 (2014)
Charge transport in MoS2 in the low carrier density regime is dominated by trap states and band edge disorder. The intrinsic transport properties of MoS2 emerge in the high density regime where conduction occurs via extended states. Here, we investig
Externí odkaz:
http://arxiv.org/abs/1407.2439