Výsledky vyhledávání - "Takehiro MINEMURA"

Preparation of SnS films by low temperature sulfurization

Autor: Kenichi Ohtsuka, Takehiro Minemura, Mutsumi Sugiyama, Keisuke Miyauchi, Koji Noguchi, Hisayuki Nakanishi

Publikováno v: physica status solidi c. 6:1221-1224

Polycrystalline tin sulfide (SnS) films were grown by sulfurization of Sn precursor at low temperatures of 120–220 °C. The p- type conductivity SnS film grown at 170 °C comprises densely packed 3–5-μm-diameter columnar grains, which is appropr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::876ac66e8fc8eef3602795ebc4c30cc8
https://doi.org/10.1002/pssc.200881166

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Photoluminescence properties of ZnSnP 2 single crystals

Autor: Mutsumi Sugiyama, Keisuke Miyauchi, Hisayuki Nakanishi, Takehiro Minemura, Sho Shirakata, Keigo Nakatani

Publikováno v: physica status solidi c. 6:1116-1119

Photoluminescence (PL) spectra of bulk ZnSnP2 crystals grown by solution growth (SG) and normal freezing (NF) methods are described. The donor-acceptor pair (DAP) transition, which possibly originates from the transition from Sn levels at Zn sites (S

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e94b68d3004fce82063d85061e15a5bf
https://doi.org/10.1002/pssc.200881170

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Photoluminescence Property of ZnSnP2by Solution Growth and Normal Freezing Methods

Autor: Sho Shirakata, Mutsumi Sugiyama, Keisuke Miyauchi, Hisayuki Nakanishi, Keigo Nakatani, Takehiro Minemura, Kenji Fukabori

Publikováno v: Japanese Journal of Applied Physics. 47:5342-5344

The photoluminescence (PL) spectra of the bulk ZnSnP2 crystals grown by the solution growth (SG) and normal freezing (NF) methods are studied. The donor–acceptor pair transition, which possibly originates from the transition from the levels of Sn a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::097164138616561723d1c1427333f3f2
https://doi.org/10.1143/jjap.47.5342

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Preparation of SnS Films by Sulfurization of Sn Sheet

Autor: Hisayuki Nakanishi, Kenichi Ohtsuka, Takehiro Minemura, Mutsumi Sugiyama, Keisuke Miyauchi, Koji Noguchi

Publikováno v: Japanese Journal of Applied Physics. 47:4494-4495

Tin sulfide (SnS) films were grown by sulfurization using an inexpensive Sn sheet and S powder. The Sn sheet was sulfurized in a closed ampoule at a low temperature between 150 and 300 °C. The resulting sulfurized films had a flat surface and large

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::856144ac11ad9502f70176a070df4273
https://doi.org/10.1143/jjap.47.4494

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