Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Takehiko Iwanaga"'
Autor:
Toshiya Asano, Takehiko Iwanaga, Yuichiro Oguchi, Naoki Kiyohara, Yukio Takabayashi, Koshiro Suzuki, Junichi Seki, Hiromi Hiura, Mitsuru Hiura, Kohei Nagane, Osamu Morimoto, Keita Sakai
Publikováno v:
Photomask Technology 2020.
For nanoimprint lithography, computational technologies are still being developed. In this paper, we introduce a new NIL process simulator which simulates the whole imprinting process, and evaluates the quality of the resulting resist film. To overco
Autor:
Mitsuru Hiura, Anshuman Cherala, Tatsuya Hayashi, Wei Zhang, Mario J. Meissl, Takamitsu Komaki, Yukio Takabayashi, Takehiko Iwanaga, Hiroshi Morohoshi, Osamu Morimoto, Se-Hyuk Im, Keita Sakai, Jin Choi
Publikováno v:
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Any new lithographic technology to be introduced into manufacturing must deliver either a performance advantage or a cost advantage. Key technical attributes include alignment, overlay and throughput. In this work, we review progress on pattern capab
Autor:
Atsushi Kimura, Yukio Takabayashi, Takehiko Iwanaga, Mitsuru Hiura, Keita Sakai, Hiroshi Morohoshi, Toshiya Asano, Tatsuya Hayashi, Takamitsu Komaki
Publikováno v:
Novel Patterning Technologies for Semiconductors, MEMS/NEMS and MOEMS 2020.
Autor:
Se-Hyuk Im, Yukio Takabayashi, Mario J. Meissl, Wei Zhang, Jin Choi, Takehiko Iwanaga, Anshuman Cherala, Osamu Morimoto, Keita Sakai
Publikováno v:
Photomask Technology 2019.
Imprint lithography is an effective and well-known technique for replication of nano-scale features. Nanoimprint lithography (NIL) manufacturing equipment utilizes a patterning technology that involves the field-by-field deposition and exposure of a
Autor:
Takamitsu Komaki, Yukio Takabayashi, Tatsuya Hayashi, Mitsuru Hiura, Hiroshi Morohoshi, Takehiko Iwanaga
Publikováno v:
Photomask Japan 2019: XXVI Symposium on Photomask and Next-Generation Lithography Mask Technology.
Nanoimprint lithography (NIL) techniques are known to possess replication resolution below 5nm. A specific form of imprint lithography using jetted resist has been developed for manufacturing advanced CMOS memory. Canon’s NIL process involves field
Autor:
TOSHIYA ASANO, Keita Sakai, Kiyohito Yamamoto, Hiromi Hiura, Takahiro Nakayama, Tomohiko Hayashi, Yukio Takabayashi, Takehiko Iwanaga, Douglas J. Resnick
Publikováno v:
Photomask Japan 2019: XXVI Symposium on Photomask and Next-Generation Lithography Mask Technology.
Autor:
Mitsuru Hiura, Hiroshi Morohoshi, Tatsuya Hayashi, Takamitsu Komaki, Takehiko Iwanaga, Yukio Takabayashi
Publikováno v:
Novel Patterning Technologies for Semiconductors, MEMS/NEMS, and MOEMS 2019.
Imprint lithography is an effective and well known technique for replication of nano-scale features. Nanoimprint lithography (NIL) manufacturing equipment utilizes a patterning technology that involves the field-by-field deposition and exposure of a
Autor:
Kiyohito Yamamoto, Yukio Takabayashi, Douglas J. Resnick, Toshiya Asano, Keita Sakai, Hiromi Hiura, Tomohiko Hayashi, Takehiko Iwanaga, Takahiro Nakayama
Publikováno v:
Novel Patterning Technologies for Semiconductors, MEMS/NEMS, and MOEMS 2019.
Imprint lithography is an effective and well known technique for replication of nano-scale features. Nanoimprint lithography (NIL) manufacturing equipment utilizes a patterning technology that involves the field-by-field deposition and exposure of a
Autor:
Makoto Mizuno, Ali Aghili, Takehiko Iwanaga, Chiaki Sato, Hiroshi Inada, Jin Choi, Kiyohito Yamamoto, Atsushi Kimura, Kohei Imoto, Mitsuru Hiura, Chris E. Jones
Publikováno v:
Novel Patterning Technologies 2018.
Nanoimprint lithography manufacturing equipment utilizes a patterning technology that involves the field-by-field deposition and exposure of a low viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into
Autor:
Tatsuya Hayashi, Yukio Takabayashi, Mitsuru Hiura, Takehiko Iwanaga, Hiroshi Morohoshi, Takamitsu Komaki
Publikováno v:
Proceedings of SPIE; 8/29/2019, Vol. 11178, p1-7, 7p