Zobrazeno 1 - 10
of 54
pro vyhledávání: '"Takefumi Kamioka"'
Autor:
Kentaro Kutsukake, Takefumi Kamioka, Kota Matsui, Ichiro Takeuchi, Takashi Segi, Takuo Sasaki, Seiji Fujikawa, Masamitu Takahasi
Publikováno v:
Science and Technology of Advanced Materials: Methods, Vol 4, Iss 1 (2024)
ABSTRACTWe analyzed a number of complicated X-ray diffraction patterns using feature patterns obtained through unsupervised machine learning. A crystalline SiGe film on a Si substrate with a spatial fluctuation in both composition and crystal orienta
Externí odkaz:
https://doaj.org/article/c5fd43a7b7414262a9bc15bb30fbf8c3
Publikováno v:
AIP Advances, Vol 9, Iss 10, Pp 105219-105219-5 (2019)
A reactive-plasma deposition (RPD) process damage is evaluated for an indium-tin-oxide (ITO)/SiO2/Si structure in terms of the recombination properties at the interface. To calculate the surface recombination velocity (SRV), the defect density at the
Externí odkaz:
https://doaj.org/article/30816bdf561542c0a2ee4f3046c74436
Autor:
Kazuhito Nakagawa, Tomohiko Hara, Takefumi Kamioka, Taichi Tanaka, Yuki Isogai, Yoshio Ohshita
Publikováno v:
Electronic Materials Letters. 17:399-405
Effect of lights with various wavelength on the defect generation in reactive plasma deposition (RPD) process is studied using capacitance–voltage analysis. Indium-tin oxide (ITO) deposition by RPD dramatically decreases the minority carrier lifeti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef058bdc98fe060a9d9e47cb43a244b9
https://doi.org/10.1007/s13391-021-00295-8
https://doi.org/10.1007/s13391-021-00295-8
Publikováno v:
MRS Communications. 11:272-277
This paper presents analytical results for improving crystalline Si solar cells, analyzed using our knowledge in radiation-induced defects in Si. This study suggests that key issues for realizing higher performance Si solar cells are decrease in carb
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51cd9003086399033f5a2687580b76d4
https://doi.org/10.1557/s43579-021-00043-x
https://doi.org/10.1557/s43579-021-00043-x
Publikováno v:
MRS Advances. 4:769-775
We have investigated the chemical and electrical properties of a thin SiO2/TiO2 stacking layer deposited on n-Si and heavily phosphorus-doped n++ Si substrates to elucidate effects of phosphorus doping of Si absorbers on the band alignment and electr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed551da78362b40807399b25f057655f
https://doi.org/10.1557/adv.2019.164
https://doi.org/10.1557/adv.2019.164
Autor:
Satoshi Yasuno, Hiroki Kanai, Takefumi Kamioka, Yoshio Ohshita, Tappei Nishihara, Atsushi Ogura, Ichiro Hirosawa
Publikováno v:
ECS Journal of Solid State Science and Technology. 8:Q101-Q105
In pursuit for the improvement of heterojunction Si solar cell performance, we evaluated Sn-doped Indium oxide (ITO)/a-Si structure by using conventional and hard X-ray photoelectron spectroscopy (XPS, HAXPES) to identify the cause of solar cell perf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38436dbb6d92423473d014aead90ebf9
https://doi.org/10.1149/2.0181906jss
https://doi.org/10.1149/2.0181906jss
Autor:
Kohei Onishi, Atsushi Ogura, Noboru Yamada, Tomoyuki Kawatsu, Takefumi Kamioka, Tappei Nishihara, Kyotaro Nakamura, Toshiki Nagai, Yukio Miyashita, Yoshio Ohshita, Ryo Yokogawa, Yutaka Hara
Publikováno v:
2020 47th IEEE Photovoltaic Specialists Conference (PVSC).
In this study, we evaluated sawing damage of thin silicon wafers. Ultra-thin silicon wafers with great advantages of bendability and lightweight are suitable for needs such as to realize PV-powered vehicles. For thin wafers, it is important to realiz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::adb2f297d9994305e780cc85fd1cd7a9
https://doi.org/10.1109/pvsc45281.2020.9300405
https://doi.org/10.1109/pvsc45281.2020.9300405
Autor:
Masafumi Yamaguchi, Naoteru Shigekawa, Jianbo Liang, Tomoya Hara, Takefumi Kamioka, Tomoki Ogawa, Kenji Araki
Publikováno v:
IEEE Journal of Photovoltaics. :1-8
Effects of GaAs/indium tin oxide (ITO)/Si junctions on III-V-on-Si multijunction solar cells are examined by fabricating and characterizing InGaP/GaAs/ITO/Si triple-junction (3J) solar cells. The 3J cells are fabricated by evaporating $\approx$ 100-n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e69a87e5d04d02e627a1b858eabbd2e8
https://doi.org/10.1109/jphotov.2018.2802203
https://doi.org/10.1109/jphotov.2018.2802203
Autor:
Atsushi Ogura, Hiroki Kanai, Takefumi Kamioka, Seira Yamaguchi, Tappei Nishihara, Tomohiko Hara, Yoshio Ohshita, Kyotaro Nakamura, Masato Koharada
Publikováno v:
Materials Science in Semiconductor Processing. 132:105887
We investigated the degradation factor of the conversion efficiency of the silicon heterojunction solar cells. In particular, we clarified the effect of the transparent conductive oxide film deposition conditions on the film quality and interface sta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f59bd851ec4a87b9399283101a84053
https://doi.org/10.1016/j.mssp.2021.105887
https://doi.org/10.1016/j.mssp.2021.105887
Autor:
Hideki Matsumura, Atsushi Ogura, Tappei Nishihara, Hiroki Kanai, Ichiro Hirosawa, Yoshio Ohshita, Satoshi Yasuno, Takefumi Kamioka
Publikováno v:
2019 IEEE 46th Photovoltaic Specialists Conference (PVSC).
We evaluated the ITO/p-type a-Si interface for Si heterojunction solar cells using XPS and TEM. It was found that ITO/a-Si interface which is 20 nm from the surface is oxidized by using non-destructive and non-contact HAXPES. The ITO/a-Si interface w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1462b04672357cc85faf5b704cc5acd
https://doi.org/10.1109/pvsc40753.2019.8980657
https://doi.org/10.1109/pvsc40753.2019.8980657