Zobrazeno 1 - 10
of 95
pro vyhledávání: '"Takayuki Yano"'
Autor:
Fumihiko Matsui, Yasuaki Okano, Hiroyuki Matsuda, Takayuki Yano, Eiken Nakamura, Satoshi Kera, Shigemasa Suga
Publikováno v:
Journal of the Physical Society of Japan. 91
Autor:
Harutaka Mekaru, Takayuki Yano
Publikováno v:
Microsystem Technologies. 27:2189-2202
Ultrasonic vibration is a powerful processing tool in cutting and bonding. However, because of its high physical energy, there are few methods to suitably fix an ultrasonic head that contacts a workpiece to an ultrasonic horn, and it is also very dif
Autor:
Hiroshi Ota, Elham Salehi, Masaki Fujimoto, Kenji Hayashi, Toshio Horigome, Hiroshi Iwayama, Masahiro Katoh, Naonori Kondo, Seiji Makita, Fumihiko Matsui, Hiroyuki Matsuda, Tetsunori Mizukawa, Aki Minakuchi, Eiken Nakamura, Masanari Nagasaka, Yasuaki Okano, Takuji Ohigashi, Masahiro Sakai, Kento Sugita, Kiyohisa Tanaka, Yoshitaka Taira, Fumitsuna Teshima, Jun-ichiro Yamazaki, Takayuki Yano, Hayato Yuzawa, Satoshi Kera
Publikováno v:
Journal of Physics: Conference Series. 2380:012003
UVSOR is a Japanese low-energy synchrotron light source that has been operational since 1983. It has 750 MeV electron beam energy and a circumference of 53 m. The machine has undergone two major upgrades and is now called UVSOR-III, with a moderately
Autor:
Takayuki Yano
Publikováno v:
Journal of the Japan Society for Precision Engineering. 85:23-26
Autor:
Harutaka Mekaru, Takayuki Yano
Publikováno v:
Microsystem Technologies. 23:2707-2717
To evolve ultrasonic nanoimprint lithography into a practical manufacturing technology, the development of a removable method of fixing molds on ultrasonic horns is an important technical problem. Four typical fixing methods using double-faced tape,
Publikováno v:
Materials Science Forum. 858:73-76
Dislocation structures at the seed/grown-crystal interface in PVT-grown 4H-SiC crystals are investigated. The dislocation density is found to show a sharp increase at the interface and its main contribution is probably ascribable to TEDs which stem f
Autor:
Masakazu Katsuno, Shinya Sato, Chisato Taniguchi, Hiroshi Tsuge, Aiko Ichimura, Tatsuo Fujimoto, Noboru Ohtani, Takayuki Yano
Publikováno v:
Materials Science Forum. 858:109-112
The formation of basal plane stacking faults in highly nitrogen-doped 4H-SiC crystals was theoretically investigated. A novel theoretical model based on the so-called quantum well action (QWA) mechanism was proposed; the model considers several facto
Autor:
Masashi Nakabayashi, Tatsuo Fujimoto, Shoji Ushio, Shinya Sato, Masakazu Katsuno, Takayuki Yano, Tani Komomo, Hiroshi Tsuge
Publikováno v:
Materials Science Forum. 858:97-100
Structural transformation from threading screw dislocations (TSDs) to stacking faults (SFs) has been investigated for PVT-grown 4H-SiC single crystals using X-ray topography and transmission electron microscopy (TEM). The transformation of TSDs is in
Autor:
Masakazu Katsuno, Daisuke Fukunaga, Takayuki Yano, Hiroshi Tsuge, Yuki Tabuchi, Tatsuo Fujimoto, Noboru Ohtani, Kohei Ohtomo, Shinya Sato, Yoshihito Teramoto
Publikováno v:
Materials Science Forum. 858:53-56
Basal plane bending and stress distribution in physical vapor transport-grown n-type 4H-SiC crystals were investigated. High resolution X-ray diffraction measurements were performed on commercially available 3-inch-diameter 4H-SiC substrates and alon
Autor:
Shunsuke Sato, Shinya Sato, Masakazu Katsuno, Kohei Ohtomo, Hiroshi Tsuge, Tomoki Yamaguchi, Takayuki Yano, Tatsuo Fujimoto, Noboru Ohtani
Publikováno v:
Journal of Crystal Growth. 431:24-31
Surface morphologies on the (000 1 ¯ ) C facet of 4H–SiC boules grown using the physical vapor transport method were examined in various scales (from millimeter to nanometer) using different types of microscopies such as differential interference