Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Takayuki Wakayama"'
Autor:
Takayuki Wakayama, Toshihiro Kogure, Kosho Akatsuka, Kazuko Saruwatari, Masa-aki Haga, Takayoshi Sasaki, Akihiko Yamagishi, Masanori Iitake, Hisako Sato
Publikováno v:
Langmuir. 22:10066-10071
Electrical conductivity of titania nanosheets was investigated for a single-layered Langmuir-Blodgett (LB) film deposited onto a comb-type electrode (5 or 10 microm (electrode spacing) x 8 mm (electrode width)). The photoresponsive electrical propert
Autor:
Nozomi Tanifuji, Toshinari Kobayashi, Nobuya Iwata, Syoji Yamada, Yasuaki Matsuda, Takayuki Wakayama
Publikováno v:
Sensors and Actuators A: Physical. 126:159-164
A fabrication process for a silicon (Si)/ceramic hybrid cantilever, proposed for obtaining even homogeneous quality and low cost micro/nano-cantilever products, is described and the preliminary results of using this type of cantilever as a probe in a
Publikováno v:
Sensors and Actuators A: Physical. 111:26-31
Recently, several researchers have reported fabrications of cantilever based on various GaAs related bulk and heterostructure materials. But the details of fabrication processes and of mechanical properties have not yet been reported so far. In this
Autor:
Shiho Cho, Fumiyoshi Takano, Kohei Ono, Masashi Yamazaki, Tomomi Kanazawa, Hiro Akinaga, Masato Takenaka, Kenichi Masuda, Takayuki Wakayama
Publikováno v:
Applied Surface Science. 254:7918-7920
We propose a reactive ion etching (RIE) process of an L10-FePt film which is expected as one of the promising materials for the perpendicular magnetic recording media. The etching was carried out using an inductively coupled plasma (ICP) RIE system a
Publikováno v:
Thin Solid Films. 515:8166-8168
A reactive ion etching technique for a semiconducting iron disilicide, β-FeSi 2 , was successfully developed using CH 4 /O 2 /NH 3 /CHF 3 discharge. A CH 4 /O 2 /NH 3 gas which is a sufficient reactant gas for materials including Fe did not etch the
Publikováno v:
Journal of Magnetics. 12:81-83
Etching of NiFe films covered with an organic photo-resist or Ti was successfully performed by an inductively coupled plasma-reactive ion etching (ICP-RIE) system using CHF₃/O₂/NH₃ discharges exchanging CHF3 for CH₄ gas gradually. Experimenta
Publikováno v:
Journal of Magnetism and Magnetic Materials. 310:e745-e747
We have succeeded in accomplishing the highly selective etching of NiFe against Ti masks by an inductively coupled plasma-reactive ion etching technique. This technique utilized CHF3/CH4/O2/NH3. The etching selectivity of Ti against NiFe was remarkab
Publikováno v:
Japanese Journal of Applied Physics. 45:L569-L571
A dry etching technique for a β-FeSi2 film on Si(111) was successfully developed. The technique is reactive ion etching (RIE) with inductively coupled plasma using CH4/O2/NH3/CHF3 discharge at a low pressure. It was found that CHF3 gas is indispensa
Autor:
Yasuaki Matsuda, Nobuya Iwata, Nozomi Tanifuji, Syoji Yamada, Takayuki Wakayama, Toshinari Kobayashi
Publikováno v:
AIP Conference Proceedings.
We present here new cantilevers for scanning probe microscopy (SPM) and sensor applications, which consist of silicon cantilever beam and ceramic pedestal. Silicon is only used to make cantilever beams and tips. Precision‐machinery‐made ceramics
Publikováno v:
AIP Conference Proceedings.
Recently, several researchers have reported fabrications of cantilever based on various GaAs related bulk and hetrostructure materials. But the details of fabrication processes and of mechanical properties have not yet been reported so far. In this w