Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Takayuki Sugino"'
Publikováno v:
AIP Advances, Vol 7, Iss 7, Pp 075204-075204-6 (2017)
Low temperature (8%) on insulating substrates is essential to realize next generation flexible electronics. To achieve this, a growth method of high quality GeSn films on insulating substrates by combination of laser irradiation and subsequent therma
Externí odkaz:
https://doaj.org/article/61a15472060343ff8fae736cfba5bed9
Autor:
Kosuke Bando, Yasuhiko Takegami, Toshihiro Ando, Takayuki Sugino, Toshifumi Sato, Tomoki Fujita, Shiro Imagama
Publikováno v:
Journal of Orthopaedic Science. 28:651-655
Open reduction and internal fixation (ORIF) for unstable ankle fractures (AF) are relatively predictable with excellent outcomes. Rehabilitation strategies are still being debated after surgical intervention for AF: non-weight bearing and cast immobi
Autor:
Toshifumi Sato, Kosuke Bando, Shiro Imagama, Takayuki Sugino, Yasuhiko Takegami, Tomoki Fujita
Publikováno v:
Injury. 52:1959-1963
Introduction One of the complications of the surgical therapy for ankle fractures includes wound infection. This study aimed to evaluate postoperative function and clarify the risk factors associated with postoperative wound infection in patients rec
Autor:
Takayuki Sugino, Yasuhiko Takegami, Kosuke Bando, Toshifumi Sato, Tomoki Fujita, Yoshiharu Oka, Shiro Imagama
Publikováno v:
Foot & Ankle Specialist. :193864002311642
Background The present study aimed to evaluate the hypothesis that a 1-week extension of the waiting period to perform surgery for ankle fracture might affect postoperative results and complications. Methods We used our multicenter database named TRO
Publikováno v:
Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials.
Publikováno v:
2017 17th International Workshop on Junction Technology (IWJT).
Low-temperature (≤200°C) formation of GeSn (substitutional Sn concentration: >8%) films on insulator is desired to realize high-speed thin film transistors (TFTs) and high-efficiency optical devices on flexible plastic substrates (softening temper
Publikováno v:
Applied Physics Letters. 113:029901
Publikováno v:
Applied Physics Letters. 112:242103
High-speed thin-film transistors (TFTs) are required to develop the next generation of electronics, such as three-dimensional large-scale integrated circuits and advanced system-in-displays. For this purpose, high-carrier-mobility semiconductor films
Publikováno v:
AIP Advances, Vol 7, Iss 7, Pp 075204-075204-6 (2017)
Low temperature (8%) on insulating substrates is essential to realize next generation flexible electronics. To achieve this, a growth method of high quality GeSn films on insulating substrates by combination of laser irradiation and subsequent therma
Publikováno v:
AIP Advances; Jul2017, Vol. 7 Issue 7, p1-6, 6p, 2 Diagrams, 2 Graphs