Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Takayuki Ikari"'
Publikováno v:
IET Power Electronics, Vol 14, Iss 10, Pp 1806-1819 (2021)
Abstract This paper presents a single‐switch zero‐voltage switching (ZVS) power‐factor correction converter based on the class‐E2 converter at 1 MHz switching frequency. A design method for ensuring the ZVS for the entire line‐voltage perio
Externí odkaz:
https://doaj.org/article/990cea0a42ed469e8751504b7bc59fc5
Publikováno v:
2019 IEEE Energy Conversion Congress and Exposition (ECCE).
Electric vehicle charging technology has come a long way and seen progressive outcomes toward a wide adoption of EVs. To further accelerate the EV evolution, though, the recharging time of electric vehicles will require much improvement. In order to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b8e538fab06696aa3e93b9ce25d53c5
https://doi.org/10.1109/ecce.2019.8912874
https://doi.org/10.1109/ecce.2019.8912874
Autor:
Takayuki Ikari, Lee Gill
Publikováno v:
2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & International Transportation Electrification Conference (ESARS-ITEC).
High dv/dt and di/dt pose new challenges to the gate driver design of Silicon Carbide (SiC) power devices. High voltage insulation and electromagnetic inference (EMI) design considerations related to the gate driver designs must be well thought-out i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8c7a92e601dd1554483dfb1b0412db0
https://doi.org/10.1109/esars-itec.2018.8607397
https://doi.org/10.1109/esars-itec.2018.8607397
Autor:
Takayuki Ikari, Ryusei Yamada, Numakura Keiichiro, Tetsuya Hayashi, Okubo Akinori, Taku Shimomura
Publikováno v:
2017 IEEE Energy Conversion Congress and Exposition (ECCE).
This paper presents dV/dt control technology that enables lower switching loss and surge, especially higher speed switching of silicon carbide (SiC) devices. This technology is a surge reduction method using a high-speed passive gate driver that inde
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fe889e6f8baddda8da667982a2a6336
https://doi.org/10.1109/ecce.2017.8096915
https://doi.org/10.1109/ecce.2017.8096915
Publikováno v:
Journal of Applied Physics. 87(9):6325-6327
Controlled arrays of Nd2Fe14B were fabricated via sputtering and lithography. The arrays were fabricated via optical and electron-beam lithography combined with dry etching technique. Designed particle size varies from 10 μm×10 μm to 0.5 μm×0.5
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6712582be1c16e3965bb2ed2bf0232bc
http://hdl.handle.net/10097/35840
http://hdl.handle.net/10097/35840
Autor:
null Shusuke Kawai, null Takayuki Ikari, null Yutaka Takikawa, null Hiroki Ishikuro, null Tadahiro Kuroda
Publikováno v:
2009 Asia and South Pacific Design Automation Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b74e1ea0c0d44035ed361856f6faf016
https://doi.org/10.1109/aspdac.2009.4796447
https://doi.org/10.1109/aspdac.2009.4796447