Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Takayuki Iino"'
Autor:
Shunsuke Onizawa, Takayuki Iino, Eiichi Hirai, Kenzo Hiroshima, Masayuki Isii, Tatsuo Araida, Tosihiko Mori, Mie Hamano, Satosi Katagiri, Takeshi Isita, Tsutomu Nakamura, Hideto Ooishi
Publikováno v:
Nihon Gekakei Rengo Gakkaishi (Journal of Japanese College of Surgeons). 42:717-723
Autor:
Mie Hamano, Takeshi Ishita, Hideto Oishi, Takuya Sato, Takayuki Iino, Tatsuo Araida, Tsutomu Nakamura
Publikováno v:
Nihon Gekakei Rengo Gakkaishi (Journal of Japanese College of Surgeons). 40:102-106
Publikováno v:
Surgery Today. 36:420-424
To determine the incidence of central venous catheter (CVC) complications and to analyze the potential risk factors for complications necessitating CVC removal in patients on home parenteral nutrition (HPN). We studied 68 patients on HPN (44 men and
Autor:
Joerg Weber, Takayuki Iino
Publikováno v:
Materials Science Forum. :993-1000
Autor:
Eiichi Hirai, Kazuhiko Yoshimatsu, Hidekazu Kuramochi, Tatsuo Araida, Michio Itabashi, Ryuji Okuyama, Takayuki Iino, Go Nakajima, Shingo Kameoka, Kazuyuki Kawakami, Kazuhiko Hayashi, Masayuki Ando, Hajime Yokomizo, Mie Hamano
Publikováno v:
Cancer Research. 76:CT124-CT124
Background: FOLFIRI plus bevacizumab (BV) is widely used as second-line chemotherapy for patients with metastatic colorectal cancer (mCRC) previously treated with FOLFOX/XELOX plus bevacizumab. However, there is insufficient data characterizing the e
Autor:
Takayuki Iino, Takayuki Hasegaws, Kazuhisa Chiba, Harunori Nagata, Tomonori Ito, Shin-nosuke Saito, Ryuichi Mitsuhashi, Shin Satori
Publikováno v:
The Proceedings of Design & Systems Conference. :1212-1
Publikováno v:
Japanese Journal of Applied Physics. 38:L1369
Dislocation-free silicon crystals have been grown successfully from heavily-boron-doped silicon melts by the Czochralski method without the dislocation-elimination-necking process (Dash neck). A dislocation-free silicon seed of orientation with a bor
Publikováno v:
Journal of Applied Physics. 63:5454-5459
We have analyzed the spectral shape of the selective pair luminescence (SPL) in undoped semi‐insulating Czochralski grown GaAs. The shape of the SPL spectra, consisting of sharp peaks and a broadband, depends strongly on the excitation photon energ
Autor:
Takayuki Iino, Michio Tajima
Publikováno v:
Japanese Journal of Applied Physics. 28:L841
The distributions of both ionized and neutral states of the dominant midgap donor EL2 in undoped, liquid-encapsulated, Czochralski-grown GaAs have been investigated by selective excitation luminescence. The intensity variations of the 0.63 and 0.68 e
Publikováno v:
Japanese Journal of Applied Physics. 27:L101
Optical absorption spectroscopy on the major midgap donor (EL2) in GaAs shows that the metastable state of the EL2 level (EL2*) can be optically recovered to the normal state (EL20) at 11 K. On the basis of the transient properties of the photoquench