Výsledky vyhledávání - "Takayuki Akaogi"

Acetic acid formation from methane and carbon dioxide via non-thermal plasma reactions towards an effective carbon fixation

Autor: Naoyuki Nishimura, Takayuki Akaogi, Kazuhiro Onishi, Masahiro Tojo

Publikováno v: New Journal of Chemistry. 46:7855-7858

A non-thermal plasma reaction with CO2 and isotopic CH4 revealed that the primly produced CH3COOH could comprise both CH4-derived carbons, indicating the importance of a particular CO2 activation control for an effective carbon fixation.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::781ee053f0d9f7f0722e123d008c6575
https://doi.org/10.1039/d2nj00409g

Zobrazit plný text záznamu

Aerobic Oxidative Esterification of Aldehydes with Alcohols by Gold–Nickel Oxide Nanoparticle Catalysts with a Core–Shell Structure

Autor: Junichi Miura, Hiroshi Ishida, Tatsuo Yamaguchi, Takayuki Akaogi, Chihiro Iitsuka, Ken Matsushita, Ken Suzuki

Publikováno v: ACS Catalysis. 3:1845-1849

Oxidative esterification of aldehydes with alcohols proceeds with high efficiency in the presence of molecular oxygen on supported gold–nickel oxide (AuNiOx) nanoparticle catalysts. The method is environmentally benign because it requires only mole

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bf943a0de10d4c04a1b25c675fba1852
https://doi.org/10.1021/cs4004084

Zobrazit plný text záznamu

Local lattice parameter determination of a silicon (001) layer grown on a sapphire (1102) substrate using convergent-beam electron diffraction

Autor: Takayuki Akaogi, Michiyoshi Tanaka, Masami Terauchi, Kenji Tsuda

Publikováno v: Journal of Electron Microscopy. 55:129-135

All the six lattice parameters (a, b, c, alpha, beta and gamma) of a Si (001) layer grown on a sapphire (1102) substrate were determined by convergent-beam electron diffraction with no assumption of crystal lattice symmetry. A lattice compression in

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6f4accf0b45f0e19ae448d662196be63
https://doi.org/10.1093/jmicro/dfl020

Zobrazit plný text záznamu

Lattice parameter determination of a composition controlled Si1-x Gex layer on a Si (001) substrate using convergent-beam electron diffraction

Autor: Takayuki Akaogi, Kenji Tsuda, Masami Terauchi, Michiyoshi Tanaka

Publikováno v: Journal of Electron Microscopy. 53:593-600

The six lattice parameters (a, b, c, alpha, beta and gamma) of Si(1-x)Ge(x), which was grown epitaxially on a Si (001) substrate with a varying Ge concentration, were determined by convergent-beam electron diffraction (CBED) without any assumption of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e303fe8b406883ca488f17f1d09cc3f8
https://doi.org/10.1093/jmicro/dfh091

Zobrazit plný text záznamu

InSb thin films grown on GaAs substrate and their magneto-resistance effect

Autor: Atsushi Okamoto, Arata Ashihara, Takayuki Akaogi, Ichiro Shibasaki

Publikováno v: Journal of Crystal Growth. :619-624

InSb thin films were grown on GaAs (1 0 0) substrates by molecular beam epitaxy (MBE). N-type impurity (Sn and Si) doping of InSb was investigated for the purpose of reducing its temperature dependence of resistivity. It was found that stable Sn-dope

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d21ae1845ae440a932c4878b65822062
https://doi.org/10.1016/s0022-0248(01)00784-9

Zobrazit plný text záznamu

Layered compound substrates for GaN growth

Autor: Kok Pin Ho, Akiyoshi Yamada, Katsuhiro Akimoto, Takayuki Akaogi, Takahiro Maruyama

Publikováno v: Journal of Crystal Growth. :332-335

A feasibility study on layered compound substrates such as MoS 2 and mica for GaN growth was carried out. GaN films were successfully grown on MoS 2 by plasma enhanced molecular beam epitaxy and the crystal quality of GaN on MoS 2 was compared with t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4d1dd8cd61eef2e0e87acf400f7e1a1f
https://doi.org/10.1016/s0022-0248(98)01342-6

Zobrazit plný text záznamu

Lattice parameter determination of a strained area of an InAs layer on a GaAs substrate using CBED

Autor: Kenji Tsuda, Michiyoshi Tanaka, Masami Terauchi, Takayuki Akaogi

Publikováno v: Journal of electron microscopy. 53(1)

All the six lattice parameters (a, b, c, alpha, beta and gamma) of a strained area of an InAs layer grown on a GaAs substrate were determined without any assumption of the crystal lattice symmetry from the higher-order Laue zone (HOLZ) lines appearin

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::27c9919eecdedcff23d9f7ae90d68f6d
https://pubmed.ncbi.nlm.nih.gov/15077894

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání