Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Takayuki Akaogi"'
Publikováno v:
New Journal of Chemistry. 46:7855-7858
A non-thermal plasma reaction with CO2 and isotopic CH4 revealed that the primly produced CH3COOH could comprise both CH4-derived carbons, indicating the importance of a particular CO2 activation control for an effective carbon fixation.
Autor:
Junichi Miura, Hiroshi Ishida, Tatsuo Yamaguchi, Takayuki Akaogi, Chihiro Iitsuka, Ken Matsushita, Ken Suzuki
Publikováno v:
ACS Catalysis. 3:1845-1849
Oxidative esterification of aldehydes with alcohols proceeds with high efficiency in the presence of molecular oxygen on supported gold–nickel oxide (AuNiOx) nanoparticle catalysts. The method is environmentally benign because it requires only mole
Publikováno v:
Journal of Electron Microscopy. 55:129-135
All the six lattice parameters (a, b, c, alpha, beta and gamma) of a Si (001) layer grown on a sapphire (1102) substrate were determined by convergent-beam electron diffraction with no assumption of crystal lattice symmetry. A lattice compression in
Publikováno v:
Journal of Electron Microscopy. 53:593-600
The six lattice parameters (a, b, c, alpha, beta and gamma) of Si(1-x)Ge(x), which was grown epitaxially on a Si (001) substrate with a varying Ge concentration, were determined by convergent-beam electron diffraction (CBED) without any assumption of
Publikováno v:
Journal of Crystal Growth. :619-624
InSb thin films were grown on GaAs (1 0 0) substrates by molecular beam epitaxy (MBE). N-type impurity (Sn and Si) doping of InSb was investigated for the purpose of reducing its temperature dependence of resistivity. It was found that stable Sn-dope
Publikováno v:
Journal of Crystal Growth. :332-335
A feasibility study on layered compound substrates such as MoS 2 and mica for GaN growth was carried out. GaN films were successfully grown on MoS 2 by plasma enhanced molecular beam epitaxy and the crystal quality of GaN on MoS 2 was compared with t
Publikováno v:
Journal of electron microscopy. 53(1)
All the six lattice parameters (a, b, c, alpha, beta and gamma) of a strained area of an InAs layer grown on a GaAs substrate were determined without any assumption of the crystal lattice symmetry from the higher-order Laue zone (HOLZ) lines appearin
Publikováno v:
Microscopy and Microanalysis. 10:310-311
Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.
Publikováno v:
Materia Japan. 45:887-887
Publikováno v:
Journal of Electron Microscopy; Dec2004, Vol. 53 Issue 6, p593-600, 8p