Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Takayoshi Maeda"'
Publikováno v:
JAPANESE JOURNAL OF GYNECOLOGIC AND OBSTETRIC ENDOSCOPY. 29:206-209
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::711d096ed618cc4cc8a6a0c458468e6a
https://doi.org/10.5180/jsgoe.29.206
https://doi.org/10.5180/jsgoe.29.206
Autor:
Tetsuhiko Onda, Toshihiro Ito, Hideaki Yamana, Motozo Hayakawa, Takayoshi Maeda, Shozo Hirano, Koichi Motoike
Publikováno v:
Biocontrol Science. 13:131-138
The effect of the heating conditions of dolomite powder on its antiviral activity was studied against the H5N3 avian influenza virus. Calcium oxide (CaO) and magnesium oxide (MgO), obtained by the thermal decomposition of dolomite above 800 degrees C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::711f423c47ccad745746ecfd711af7e3
https://doi.org/10.4265/bio.13.131
https://doi.org/10.4265/bio.13.131
Autor:
Yohei Yoshida, Hideto Miyake, Kazumasa Hiramatsu, Yasushi Iyechika, Yoichi Yamada, Takayoshi Maeda, Tsunemasa Taguchi
Publikováno v:
Journal of Applied Physics. 96:138-143
Excitonic optical properties of GaN have been studied by means of time-resolved nonlinear luminescence spectroscopy, which was based on an excitation correlation technique under excitation at which a transition of the dominant radiative recombination
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99edff1f4b43f57cfad832e7f57a4d8b
https://doi.org/10.1063/1.1755853
https://doi.org/10.1063/1.1755853
Autor:
Katsuya Nishiyama, Hiromitsu Mizutani, Masaru Onishi, Yasushi Iyechika, Atsushi Motogaito, Kazumasa Hiramatsu, Hideto Miyake, Takayoshi Maeda, Mitsuhisa Narukawa
Publikováno v:
Journal of Crystal Growth. 221:316-326
Facet structures of GaN grown by epitaxial lateral overgrowth (ELO) via low-pressure metalorganic vapor-phase epitaxy (LP-MOVPE) are controlled by growth conditions such as reactor pressure and growth temperature, where this technique is called facet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e0b163ed3503e622a6d80542a7e8e3f
https://doi.org/10.1016/s0022-0248(00)00707-7
https://doi.org/10.1016/s0022-0248(00)00707-7
Publikováno v:
KAGAKU KOGAKU RONBUNSHU. 26:804-810
トリメチルガリウム (TMG) とNH3を原料ガスとして用いた有機金属化学気相析出法 (MOCVD法) によるGaNエピタキシャル薄膜の製造に及ぼす, 反応器内圧力とガス流量の影響を実験とシミュレー
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce77b0edf1055ce1c0b292047c3d7a00
https://doi.org/10.1252/kakoronbunshu.26.804
https://doi.org/10.1252/kakoronbunshu.26.804
Autor:
Kazumasa Hiramatsu, Yasutoshi Kawaguchi, Masahito Yamaguchi, Hiroki Sone, Takayoshi Maeda, Yasushi Iyechika, Hideto Miyake, Nobuhiko Sawaki, Shingo Nambu
Publikováno v:
MRS Internet Journal of Nitride Semiconductor Research. 4:441-446
Selective area growth (SAG) and epitaxial lateral overgrowth (ELO) of GaN using tungsten (W) mask by metalorganic vapor phase epitaxy (MOVPE) and hydride vapor phase epitaxy (HVPE) have been studied. The selectivity of the GaN growth on the W mask as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ba3ffa609b2430eb854264700c1902f1
https://doi.org/10.1557/s1092578300002866
https://doi.org/10.1557/s1092578300002866
Publikováno v:
Natural Product Letters. 11:187-192
5-(3-Hydroxyphenyl)pentanoic acid (1) and 5-(3-methoxyphenyl)pentanoic acid (2) were isolated from the roots of Athyrium yokoscense as natural products. The biosynthetic pathway of 1 and 2 can be explained in terms of direct m-hydroxylation of benzoi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c25140ba3a17ce293ae20ada963334ec
https://doi.org/10.1080/10575639808044945
https://doi.org/10.1080/10575639808044945
Autor:
Akira Endou, Takayoshi Maeda, Momoji Kubo, András Stirling, Kazuya Tsujimichi, Yasushi Iyechika, Ryuji Miura, Tomonori Kanougi, Akira Miyamoto
Publikováno v:
Applied Surface Science. 119:107-110
Periodic density functional calculations have been performed to study a mechanism of passivation of Mg-doped GaN by hydrogen. Optimizing different initial positions of hydrogen we found some favorable positions for the hydrogen atoms within the unit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28296fd7787fbbb4f3c5fe03d6ad241e
https://doi.org/10.1016/s0169-4332(97)00176-1
https://doi.org/10.1016/s0169-4332(97)00176-1
Publikováno v:
Japanese Journal of Applied Physics. 42:L732-L734
The tilt and twist of GaN prepared by facet-controlled epitaxial lateral overgrowth (FACELO) were evaluated by the X-ray rocking curve measurement of symmetric and asymmetric reflections. Compared to the underlying GaN, the tilt and twist values beca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d21c949e378a1ec32f5421320d8c3a9e
https://doi.org/10.1143/jjap.42.l732
https://doi.org/10.1143/jjap.42.l732
Autor:
Tetsuji Yasuda, Taro Itatani, Osamu Ichikawa, Takayoshi Maeda, Wipakorn Jevasuwan, H. Ishii, M. Hata
Publikováno v:
Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2394f68a605c31d015521a34ca0a86c
https://doi.org/10.7567/ssdm.2012.f-1-3
https://doi.org/10.7567/ssdm.2012.f-1-3