Behavior of atomic radicals and their effects on organic low dielectric constant film etching in high density N[sub 2]/H[sub 2] and N[sub 2]/NH[sub 3] plasmas.

Autor: Nagai, Hisao, Takashima, Seigou, Hiramatsu, Mineo, Hori, Masaru, Goto, Toshio

Publikováno v: Journal of Applied Physics; 3/1/2002, Vol. 91 Issue 5, p2615, 7p, 2 Black and White Photographs, 2 Diagrams, 8 Graphs

Behavior of hydrogen atoms in ultrahigh-frequency silane plasma.

Autor: Takashima, Seigou, Hori, Masaru, Goto, Toshio, Yoneda, Katsumi

Publikováno v: Journal of Applied Physics; 5/1/2001, Vol. 89 Issue 9, p4727, 5p, 1 Diagram, 7 Graphs

Vacuum ultraviolet absorption spectroscopy employing a microdiacharge hollow-cathode lamp for...

Autor: Takashima, Seigou, Hori, Masaru, Goto, Toshio, Kono, Akihiro, Ito, Masafumi, Yoneda, Katsumi

Publikováno v: Applied Physics Letters; 12/20/1999, Vol. 75 Issue 25, p3929, 3p, 2 Diagrams, 3 Graphs