Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Takashi Yoda"'
Publikováno v:
Applied Physics Express, Vol 17, Iss 8, p 085501 (2024)
We report first-principles calculations that unveil elementary processes of nitrogen donor doping during epitaxial growth of silicon carbide (SiC). We find that a N _2 molecule adsorbed on the terrace migrates to a particular step edge where under-co
Externí odkaz:
https://doaj.org/article/072b90f2101f49e0ba60d27f267e9920
Autor:
Arisa Kimura, Kaito Kuroki, Ryoichiro Yoshida, Kenji Hirakawa, Masayuki Iwase, Munehiro Ogasawara, Takashi Yoda, Noboru Ishihara, Hiroyuki Ito
Publikováno v:
Japanese Journal of Applied Physics. 62
The response of N-type MOSFET characteristics to TID (Total Ionizing Dose) effects caused by γ-ray irradiation was modeled as a sum of two exponential functions which expresses the charge accumulation of the oxide traps and the interface traps respe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d1cdc31f78450954ab27152c848f5d03
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100885805
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100885805
Autor:
Yusuke Ebihara, Ayako Mizushima, Takashi Yoda, Kenji Hirakawa, Masayuki Iwase, Munehiro Ogasawara, Akio Higo, Yukinori Ochiai, Yoshio Mita
Publikováno v:
2022 IEEE 34th International Conference on Microelectronic Test Structures (ICMTS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0b3322fad3640abab03f14f7736e20b
https://doi.org/10.1109/icmts50340.2022.9898248
https://doi.org/10.1109/icmts50340.2022.9898248
Autor:
Takashi Yoda, Noboru Ishihara, Yuta Oshima, Motoki Ando, Kohei Kashiwagi, Ryoichiro Yoshida, Arisa Kimura, Kaito Kuroki, Shinsuke Nabeya, Kenji Hirakawa, Masayuki Iwase, Munehiro Ogasawara, Hiroyuki Ito
Publikováno v:
Japanese Journal of Applied Physics. 61
Circuits for CMOS two-dimensional (2-D) array data transfer are indispensable for applications such as space and nuclear fields. Issues include being operated with higher speed, lower power, fewer size penalties, and radiation hardness. To meet these
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8bbe0fc6304cf87562c1efd2cc093f3d
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100874132
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100874132
Autor:
Kenji Hirakawa, Ryoichiro Yoshida, Arisa Kimura, Munehiro Ogasawara, Noboru Ishihara, Hiroyuki Ito, Motoki Ando, Shinsuke Nabeya, Masayuki Iwase, Yuta Oshima, Takashi Yoda
Publikováno v:
Japanese Journal of Applied Physics. 60:104501-1
The dependence of the total ionizing dose effect (TID effect) of continuously operating nMOS transistors, irradiated with gamma-ray from a Co60 source, on the on/off duty ratio of a gate voltage was studied. The transistors were manufactured by a 180
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f08297930193f6981f6596640bece6b7
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100874137
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100874137
Publikováno v:
Japanese Journal of Applied Physics. 60:085503
Halide chemical vapor deposition (HCVD) technique has been improved to realize the defect-free 4H-SiC epitaxial layers. Although it is possible to obtain the 4H-SiC epitaxial layers by both HCVD and conventional CVD techniques, it has not been clearl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::009ea791f5d0c15affd4a6d669c841f2
https://doi.org/10.35848/1347-4065/ac1127
https://doi.org/10.35848/1347-4065/ac1127
Autor:
Kyomin Sasaki, Jinhan Song, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Ichiro Mizushima, Takashi Yoda, Kuniyuki Kakushima
Publikováno v:
ECS Meeting Abstracts. :1294-1294
SiC has been focused as a strong candidate for high efficient power device semiconductors at high voltage regions1. Recent demonstrations of insulated gate bipolar transistors (IGBT) at a voltage over 15kV have proven the advantage of the use of SiC2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de9958fa8bed38286ebd618b6f933e28
https://doi.org/10.1149/ma2019-01/26/1294
https://doi.org/10.1149/ma2019-01/26/1294
Autor:
Takeshi Nakatani, Tadahiro Hyakudome, Hiroshi Ochi, Hiroshi Matsumoto, Takao Sawa, Takuya Shimura, Mitsuyasu Deguchi, Tatsuya Fukuda, Koji Meguro, Yoshiyuki Nakano, Hiroshi Yoshida, Yoshitaka Watanabe, Ryotaro Suga, Takashi Yoda
Publikováno v:
2016 Techno-Ocean (Techno-Ocean).
JAMSTEC has operated autonomous underwater vehicles (AUVs) for scientific survey of seabed mineral resources. Conventionally, the number of AUVs the support vessel can track is limited to one during operations. However, it takes a long time for one A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b2a086d01610e02d840e911b206bb59
https://doi.org/10.1109/techno-ocean.2016.7890665
https://doi.org/10.1109/techno-ocean.2016.7890665
Autor:
Hajime Nago, Takashi Yoda, Takehiko Kobayashi, Yasushi Iyechika, Hideshi Takahashi, Masayuki Tsukui, Shinichi Mitani, Yoshitaka Ishikawa, Kiyotaka Miyano
Publikováno v:
Japanese Journal of Applied Physics. 57:07ME04
For the utilization of high-electron-mobility transistor (HEMT) devices fabricated on GaN on Si structure as high-power devices, deep pits, which are known as inverted pyramid-shaped defects formed in the surface of a HEMT structure, are critical bec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e479c74ce9f7e03550d98c7569b3d451
https://doi.org/10.7567/jjap.57.07me04
https://doi.org/10.7567/jjap.57.07me04
Publikováno v:
Analytical Sciences. 22:1501-1507
The apparent diffusion coefficients of tris(2,2'-bipyridyl)ruthenium ([Ru(bpy(3))](2+)) are estimated in silica-nanochannels which are assembled inside columnar alumina pores in an anodic alumina membrane, and are modified with alkylsilanes such as t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::25beb7e2e91e7ff4b904d4c964d1a526
https://doi.org/10.2116/analsci.22.1501
https://doi.org/10.2116/analsci.22.1501