Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Takashi Unagami"'
Autor:
Takahiro AKABANE, Rie NOZAWA, Suzuka KOSUGI, Sayaka KIMURA, Chika SATO, Masayuki ARAI, Takashi UNAGAMI
Publikováno v:
Transactions of Japan Society of Kansei Engineering. 8:691-699
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca3adbf8331fbc188778c6fe593205f1
https://doi.org/10.5057/jjske.8.691
https://doi.org/10.5057/jjske.8.691
Autor:
Takashi Unagami
Publikováno v:
Journal of The Electrochemical Society. 146:3110-3113
The formation of single‐crystal by a gel method and the electrical conductivity of these crystals are reported. In the high‐temperature region above 245°C, the conduction is intrinsic with an activation energy of 1.70 eV and is controlled by the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f796c0027900d7701c34cc174c57050
https://doi.org/10.1149/1.1392439
https://doi.org/10.1149/1.1392439
Autor:
Takashi Unagami
Publikováno v:
Journal of The Electrochemical Society. 146:1593-1596
This paper presents the results of a chemical vapor deposition study on a new heteroepitaxial system in which highly oriented silicon (Si) films are grown on an evaporated ZnS film/glass substrate. The crystallization of the Si film is stimulated usi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4c8679a5ffafa63a1ffd2f660070fce
https://doi.org/10.1149/1.1391810
https://doi.org/10.1149/1.1391810
Autor:
Takashi Unagami
Publikováno v:
Journal of The Electrochemical Society. 151:G181
Porous silicon was prepared in a square p + -Si ring formed in an N-type Si epitaxial layer grown on a p-type Si substrate. A sharp notch was generated at the PN junction of the surface during anodization in HF solution. The notch formed at the bound
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9025de51733f5483914ffaca416af820
https://doi.org/10.1149/1.1644608
https://doi.org/10.1149/1.1644608
Autor:
Takashi Unagami
Publikováno v:
Journal of The Electrochemical Society. 149:G539
Boron profiles and interface characteristics of SiO 2 /Si structure when boron was implanted by high energy implantation were studied. A very narrow (∼0.3 μm) channel-stop layer can be formed under a 1.5 μm thick SiO 2 layer by high energy B + im
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13b51e318f0e2a40909fbea024d14ba6
https://doi.org/10.1149/1.1498842
https://doi.org/10.1149/1.1498842
Rate Determing Step of Anodic Charge-Transfer Process during Porous Silicon Formation in HF Solution
Autor:
Takashi Unagami
Publikováno v:
Japanese Journal of Applied Physics. 36:5421
Anodic reactions for the formation of porous silicon have been examined with regard to the rate determining step of charge-transfer processes. Porous silicon is formed by local silicon dissolution along with both divalent and tetravalent ions. The di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bf82f5870c6731c32060c1472b9cb24
https://doi.org/10.1143/jjap.36.5421
https://doi.org/10.1143/jjap.36.5421
Publikováno v:
Japanese Journal of Applied Physics. 36:L737
The morphology of amorphous silicon (a-Si) thin films prepared by rf diode sputtering was examined. The self-bias potential drops sharply with deceasing argon gas pressure below 30 mTorr and strongly influences the morphology of the sputtered a-Si fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a46f6568c558fb062ee9390af042235
https://doi.org/10.1143/jjap.36.l737
https://doi.org/10.1143/jjap.36.l737
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 5:1771-1774
Magnetron‐sputtered Ta2O5 films on Si are analyzed for their applications to semiconductor devices. It is clarified that the transition region formed at the Ta2O5/Si interface plays a significant role in determining electrical characteristics. This
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::329e7f4e7811b20fa9a7c5e8a14a50d3
https://doi.org/10.1116/1.574536
https://doi.org/10.1116/1.574536
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 1:1825-1830
UV‐stimulated photocurrent spectroscopy and photocurrent transient methods have been used to determine the effects of deposition parameters on the electron trapping level density and its energy distribution in rf‐sputtered Ta2O5 films. Results of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6fa79a143c33bcfbdd4308ef79121df1
https://doi.org/10.1116/1.572222
https://doi.org/10.1116/1.572222
Publikováno v:
Journal of The Electrochemical Society. 131:2621-2625
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::346cb009bac0729ce3c657e905e174c9
https://doi.org/10.1149/1.2115371
https://doi.org/10.1149/1.2115371