Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Takashi Sueyoshi"'
Publikováno v:
Scientific Reports
Amorphous perfluoroalkenyl vinyl ether polymer devices can store a remarkably powerful electric charge because their surface contains nanometre-sized cavities that are sensitive to the so-called quantum-size effect. With a work function of approximat
Autor:
Takashi Sueyoshi
Publikováno v:
Journal of the Japan Society of Colour Material. 85:471-477
Publikováno v:
Surface Science. 466:183-188
High-temperature scanning tunneling microscopy (HTSTM) has been applied to analyze the mechanism of a reversible phase transition between the ‘16×2’ structure and the 1×1 structure appearing on a clean Si(110) surface. The ‘16×2’ structure
Autor:
Yoshimichi Nakamura, Tomoshige Sato, Masashi Iwatsuki, Takashi Sueyoshi, Hiroshi Tochihara, Hiroshi Kawai, Takaaki Amakusa, Masatoshi Nakayama
Publikováno v:
Journal of the Physical Society of Japan. 67:2330-2334
The structure of a Si(001) surface with monatomic steps is investigated by means of scanning tunneling microscopy at 95 K and Monte Carlo simulations (MCS) at various temperatures. In particular, we pay attention to the effect of kinks at the step ed
Autor:
Kentaro Kaneko, Masashi Iwatsuki, Takashi Sueyoshi, K. Yagi, Tomoshige Sato, Yasumasa Tanishiro, Hiroki Minoda
Publikováno v:
Surface Science. :407-413
Indium adsorption and desorption processes on Si(l 11) surfaces were observed in situ by UHV high-temperature STM. By the deposition of In on the Si(111)7 X 7 surfaces at 380°C, the surface structure changed successively to √3 x √3, √31 X √3
Autor:
Takayuki Suzuki, K. Yagi, Yasumasa Tanishiro, Masashi Iwatsuki, Takashi Sueyoshi, Tomoshige Sato, Hiroki Minoda
Publikováno v:
Surface Science. :522-526
We carried out STM observations of Si(5 5 12) surfaces. STM images showed that the surface has a long period of about 5 nm along the 〈665〉 direction that coincides with a period of the bulk terminated structure, and a period of about 0.7 nm along
Publikováno v:
Physical Review B. 53:7863-7867
The structure of kinks at monatomic steps on Si(001) and Ge(001) is investigated by high-resolution scanning tunneling microscopy at room temperature. In addition to previously known asymmetric-dimers at edges of the ${\mathit{S}}_{\mathit{A}}$ and $
Autor:
Takashi Sueyoshi, Yasukazu Ohkatsu
Publikováno v:
Journal of Japan Oil Chemists' Society. 45:137-145
The effect of length of hydrophobic chains of a glycolipid catalyst was studied on hydrolyses of amino acid esters from those having hydrophilic to those having hydrophobic natures. The glycolipid was allowed to interact with phosphatidyl cholin, add
Publikováno v:
Surface Science. 340:328-332
We have investigated detailed structures of monatomic steps on Ge(001) at room temperature by using high-resolution scanning tunneling microscopy. Our conclusions are different from those of Kersten et al. [Surf. Sci. 322 (1995) 1] for the same syste
Publikováno v:
Journal of Applied Physics. 75:2421-2425
High‐temperature scanning tunneling microscopy was used to study the crystal growth of a (15,17,1) vicinal plane on a Si(110) surface, and the dynamic behavior of surface Si atoms at high temperature was directly observed. It was found that an impu