Zobrazeno 1 - 10
of 109
pro vyhledávání: '"Takashi Shinohe"'
Publikováno v:
AIP Advances, Vol 10, Iss 12, Pp 125119-125119-4 (2020)
An n-type α-Ga2O3 layer was grown by mist chemical vapor deposition on a sapphire substrate, and a Ti/α-Ga2O3 Schottky barrier diode was fabricated. Although the α-Ga2O3 layer has a high threading dislocation density (larger than 109 cm−2), the
Externí odkaz:
https://doaj.org/article/e64b531672af4c0588aac636bbb3ac69
Autor:
Takashi Shinohe
Publikováno v:
2022 International Power Electronics Conference (IPEC-Himeji 2022- ECCE Asia).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef8d3e5c1782e8ad2053ba1acf7b366b
https://doi.org/10.23919/ipec-himeji2022-ecce53331.2022.9807052
https://doi.org/10.23919/ipec-himeji2022-ecce53331.2022.9807052
Publikováno v:
Japanese Journal of Applied Physics. 62:SF1014
In this study, the Sn concentration dependence of the sheet and contact resistances of the m-plane α-Ga2O3 were analyzed and the corresponding current mechanism was determined. The measurements were performed using samples by systematically varying
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7ed35fc7340d70f26e7174470b2ba66
https://doi.org/10.35848/1347-4065/acc03b
https://doi.org/10.35848/1347-4065/acc03b
Autor:
Syuhei Yamashita, Ryo Moriya, Hitoshi Takane, Yuuichi Wada, Yuto Yamafuji, Junjiroh Kikawa, Makoto Matsukura, Takahiro Kojima, Takashi Shinohe, Kentaro Kaneko, Tsutomu Araki
Publikováno v:
Japanese Journal of Applied Physics. 62:SF1012
ScAlMgO4 (SAM) substrates have a trigonal structure with high cleavability in the c-plane. Because this substrate can be easily cleaved, gallium oxide (Ga2O3) can be grown on the SAM substrate, and the difficulty in the heat dissipation of Ga2O3 may
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87a0f46fea6e628b7e0b4dd89be63ca5
https://doi.org/10.35848/1347-4065/acbf5a
https://doi.org/10.35848/1347-4065/acbf5a
Publikováno v:
Thin Solid Films. 685:17-25
We used herein scanning internal photoemission microscopy (SIPM) that can map electrical characteristics and applied it to characterize the thermal stability of three kinds of α-Ga2O3 Schottky barrier diodes (SBDs). Good rectification characteristic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f10a275c011c370a5135f98c945892e
https://doi.org/10.1016/j.tsf.2019.05.063
https://doi.org/10.1016/j.tsf.2019.05.063
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2043f456192470cfdc846162b835c71f
https://doi.org/10.7567/ssdm.2020.k-8-01
https://doi.org/10.7567/ssdm.2020.k-8-01
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1121ed94d07ee224ba7b28f707edd07a
https://doi.org/10.7567/ssdm.2020.k-8-02
https://doi.org/10.7567/ssdm.2020.k-8-02
Autor:
Ryo Moriya, Junjiro Kikawa, Shinichiro Mouri, Takashi Shinohe, Shiyu Xiao, Hideto Miyake, Tsutomu Araki
Publikováno v:
physica status solidi (b). 259:2100598
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02243257737c46093aa59e12a71410f5
https://doi.org/10.1002/pssb.202100598
https://doi.org/10.1002/pssb.202100598
Publikováno v:
Journal of Crystal Growth. 576:126387
Threading dislocations in a heteroepitaxial α-Ga2O3 film was visualized as etch pits on the surface. We found that etch pits were formed on a c-plane α-Ga2O3 epilayer by HCl gas etching. The epilayer was prepared by using epitaxial lateral overgrow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37411a88de5ddc42a5dd075a0748a0b7
https://doi.org/10.1016/j.jcrysgro.2021.126387
https://doi.org/10.1016/j.jcrysgro.2021.126387
Publikováno v:
Journal of Applied Physics. 130:175304
We demonstrated the epitaxial lateral overgrowth (ELO) of (1¯012) (r-plane) α-Ga2O3 using a striped mask pattern along ⟨1¯21¯0⟩. α-Ga2O3 stripes with an asymmetric cross-sectional shape were formed selectively on the windows at the initial g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80f1c5f219d596721266ad3925bf132c
https://doi.org/10.1063/5.0068097
https://doi.org/10.1063/5.0068097