Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Takashi Oinoue"'
Autor:
Sozo Yokogawa, Itaru Oshiyama, Harumi Ikeda, Yoshiki Ebiko, Tomoyuki Hirano, Suguru Saito, Takashi Oinoue, Yoshiya Hagimoto, Hayato Iwamoto
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
Abstract We report on the IR sensitivity enhancement of back-illuminated CMOS Image Sensor (BI-CIS) with 2-dimensional diffractive inverted pyramid array structure (IPA) on crystalline silicon (c-Si) and deep trench isolation (DTI). FDTD simulations
Externí odkaz:
https://doaj.org/article/16be2a0f87194729aa205b6c3d07b156
Autor:
Yoshiya Hagimoto, Junichi Ida, Kenya Nishio, Hayato Iwamoto, Suguru Saito, Takashi Oinoue, Yuichi Ogawa
Publikováno v:
Solid State Phenomena. 314:84-88
Group III–V compound semiconductors are attracting attention as new channel materials that have higher carrier mobility than Si. However, defects easily occur at the interface between the semiconductor and insulator film, which degrades performance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05a89a87521fd9c0a05b51947fda92a5
https://doi.org/10.4028/www.scientific.net/ssp.314.84
https://doi.org/10.4028/www.scientific.net/ssp.314.84
Publikováno v:
Solid State Phenomena. 282:83-87
The HF/HNO3mixture Si etching process is widely used to remove stress and damaged layers after Si wafer back grinding. Although there have been many reports on the dip process, there have been few detailed reports on the single-spin process. In a sin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1622c0b09e312381ddef22f0ac969f12
https://doi.org/10.4028/www.scientific.net/ssp.282.83
https://doi.org/10.4028/www.scientific.net/ssp.282.83
Autor:
Harumi Ikeda, Itaru Oshiyama, Yokogawa Sozo, Yoshiya Hagimoto, Suguru Saito, Hayato Iwamoto, Ebiko Yoshiki, Tomoyuki Hirano, Takashi Oinoue
Publikováno v:
Scientific Reports
Scientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
Scientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
We report on the IR sensitivity enhancement of back-illuminated CMOS Image Sensor (BI-CIS) with 2-dimensional diffractive inverted pyramid array structure (IPA) on crystalline silicon (c-Si) and deep trench isolation (DTI). FDTD simulations of semi-i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d5536aabe4f4999550c83bb571bde3ce
http://europepmc.org/articles/PMC5476616
http://europepmc.org/articles/PMC5476616