Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Takashi Namura"'
Autor:
Masahiro Kitajima, Tatsuya Aoki, Masato Uchida, Takashi Namura, Masako Okuda, Tadayuki Hashimoto
Publikováno v:
An Official Journal of the Japan Primary Care Association. 45:132-135
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7bdb6be69c345ddb6751b1469796cf9
https://doi.org/10.14442/generalist.45.132
https://doi.org/10.14442/generalist.45.132
Autor:
Genshu Fuse, Katsuya Ishikawa, Morio Inoue, Yoshiki Fukuzaki, Takashi Namura, Masakatsu Yoshida, Norishige Aoki
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 74:306-310
Ion implantation charging has been studied by evaluation of the threshold voltage shift (ΔVt) of EEPROM devices. The threshold voltage shifted proportionally with the variation of the electron emission current. This method allows the uniformity of c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dca66fb94468b44b393c9bda7e477b7b
https://doi.org/10.1016/0168-583x(93)95066-e
https://doi.org/10.1016/0168-583x(93)95066-e
Publikováno v:
Review of Scientific Instruments. 63:21-30
A comparative study on the generation of 2.45‐GHz multicusp electron cyclotron resonance (ECR) plasma is performed. Looped cusp structures such as the ring‐cusp give a low‐power and low‐pressure ignition, and vice versa, indicating an importa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84da3ecd1fafa987d6c2346b39091b26
https://doi.org/10.1063/1.1142961
https://doi.org/10.1063/1.1142961
Autor:
Satoshi Nakagawa, Hiroyuki Okada, Yoshihiro Todokoro, Hirofumi Uchida, Atsushi Koshio, Takashi Namura, Morio Inoue
Publikováno v:
SPIE Proceedings.
Wafer charging in barrel etchers, reactive ion etching (RIE) etchers, magnetron RIE (MRIE) etchers and electron cyclotron resonance (ECR) etchers are characterized. The charging voltages were measured by using electrically programmable non-volatile m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20719c9d2b1b6040789170bf71c45503
https://doi.org/10.1117/12.56911
https://doi.org/10.1117/12.56911
Publikováno v:
Japanese Journal of Applied Physics. 33:2194
The effectiveness of a curved lateral magnetic field has been examined in magnetically enhanced reactive ion etching (MERIE). It is demonstrated that both charge build-up and etching nonuniformity are suppressed at the same time when the offset angle
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5549d5d69bfffaf7b1cc76831e30c426
https://doi.org/10.1143/jjap.33.2194
https://doi.org/10.1143/jjap.33.2194
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 9:2752
The detailed profiles of the wafer charging in different barrel reactor configurations have been obtained by using the electrically erasable–programmable read‐only memory devices. Charging profile in a parallel electrode system depends strongly o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8504f653c3f94505972d91897f9a1689
https://doi.org/10.1116/1.585638
https://doi.org/10.1116/1.585638
Autor:
Yoshiki Fukuzaki, Katsuya Ishikawa, Morio Inoue, Takashi Namura, Norishige Aoki, Yoshihiro Todokoro
Publikováno v:
Japanese Journal of Applied Physics. 30:3223
Device charging in the ion implantation is evaluated by using two different types of electrically erasable-programmable read-only memory (EEPROM) devices and two different types of metal-oxide-semiconductor (MOS) capacitors. The averaged charging vol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79c03de4b0784514040b3a35383c73cc
https://doi.org/10.1143/jjap.30.3223
https://doi.org/10.1143/jjap.30.3223
Publikováno v:
Japanese Journal of Applied Physics. 30:1576
The charge buildup in a magnetron etcher has been studied experimentally for two different magnet arrangements and theoretically on the basis of an equivalent circuit model. Wafer charging measured with a metal-Si3N4-SiO2-Si (MNOS) capacitor is negat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc3c9ad7ae469c67f90f211eb0547742
https://doi.org/10.1143/jjap.30.1576
https://doi.org/10.1143/jjap.30.1576
Publikováno v:
Japanese Journal of Applied Physics. 29:2251
The charge build-up in an electron cyclotron resonance (ECR) etcher has been studied experimentally and theoretically. The experimental results show that the charge build-up profiles of the wafer are convex and positive, and are detected only when th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3c66e10299d90a480f6ab4c5ce7e785
https://doi.org/10.1143/jjap.29.2251
https://doi.org/10.1143/jjap.29.2251