Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Takashi Minotani"'
Autor:
Takashi Minotani, Nobutoshi Arai, Yasuhito Gotoh, Kouichirou Adachi, Tetsuya Okumine, Naoyuki Gotoh, Hiroshi Tsuji, Hiroshi Kotaki, Toyotsugu Ishibashi, Junzo Ishikawa
Publikováno v:
Surface and Coatings Technology. 201:8312-8316
The depth profile is a very important information for nanoparticle formation in very thin SiO 2 films by ion implantation prior to TEM observation, because of the thermal diffusion of implanted atoms. Here, we have investigated depth profiles of Ge a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0195d82403254d5c74efe37dcdde0558
https://doi.org/10.1016/j.surfcoat.2006.01.089
https://doi.org/10.1016/j.surfcoat.2006.01.089
Autor:
Nobutoshi Arai, Takashi Minotani, Hiroshi Kotaki, Junzo Ishikawa, Yasuhito Gotoh, Naoyuki Gotoh, Kouichiro Adachi, Tetsuya Okumine, Toyotsugu Ishibashi, Hiroshi Tsuji
Publikováno v:
Surface and Coatings Technology. 201:8516-8520
Germanium nanoparticles were formed in thin silicon dioxide by using negative-ion implantation, which has the advantage of being almost "charge-up free" even in insulators, resulting in the achievement of precise controls in depth and fluence without
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::df025e9bf75f6406df7987173189fa88
https://doi.org/10.1016/j.surfcoat.2006.02.063
https://doi.org/10.1016/j.surfcoat.2006.02.063
Autor:
Junzo Ishikawa, Naoyuki Gotoh, Kenji Kojima, Kouichiro Adachi, Toyotsugu Ishibashi, Takashi Minotani, Hiroshi Tsuji, Nobutoshi Arai, Yasuhito Gotoh, H Kotaki
Publikováno v:
Journal of Physics: Conference Series. 61:1196-1201
Ge nanoparticles (NPs) embedded silicon oxide is expected to be promising light emission source, especially, UV – blue light region. We have tried to form Ge NPs in a 100- nm-thick SiO2 layer on Si substrate by multi-energy implantation of Ge negat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b133912e6464835791d10cf31323a72b
https://doi.org/10.1088/1742-6596/61/1/236
https://doi.org/10.1088/1742-6596/61/1/236
Autor:
Nobutoshi Arai, Junzo Ishikawa, H Kotaki, Takashi Minotani, Kouichiro Adachi, Naoyuki Gotoh, Hiroshi Tsuji, Toyotsugu Ishibashi, Yasuhito Gotoh
Publikováno v:
Journal of Physics: Conference Series. 61:41-45
Ion implantation technique is useful method to dope atoms in a thin layer to make nanoparticles. However, the thermal annealing is required for recovering ion-induced damages and growing NPs. Therefore, the redistribution of implanted atoms in the la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05f390bd1dbbda3702e6d9b4a1243167
https://doi.org/10.1088/1742-6596/61/1/009
https://doi.org/10.1088/1742-6596/61/1/009
Autor:
Nobutoshi Arai, Kouichiro Adachi, Hiroshi Kotaki, Hiroshi Tsuji, Junzo Ishikawa, Toyotsugu Ishibashi, Takashi Minotani, Naoyuki Gotoh, Kenji Kojima, Yasuhito Gotoh
Publikováno v:
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS. 257:94-98
We have investigated germanium nanoparticle formation in a 25-nm-thick oxide layer on silicon substrate by negative-ion implantation for single electron devices. Ge negative-ions were implanted into the oxide layer at 10 keV with fluences of 1 × 101
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d81a2d0c481a42f83479135a1ac2c90e
http://hdl.handle.net/2433/67203
http://hdl.handle.net/2433/67203
Autor:
Junzo Ishikawa, Nobutoshi Arai, Toyotsugu Ishibashi, Yasuhito Gotoh, Kouichirou Adachi, Kenji Kojima, Takashi Minotani, Hiroyuki Nakatsuka, Hiroshi Kotaki, Hiroshi Tsuji
Publikováno v:
Transactions of the Materials Research Society of Japan. 32:907-910
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dffd9d0b291d5dc335c9116c655bb317
https://doi.org/10.14723/tmrsj.32.907
https://doi.org/10.14723/tmrsj.32.907
Autor:
Nobutoshi Arai, Junzo lshikawa, Takashi Minotani, Kouichiro Adachi, Kenji Kojima, Naoyuki Gotoh, Katsumi Takahiro, Hiroshi Kotaki, Toyogi Ishibashi, Yasuhito Gotoh, Hiroshi Tsuji
Publikováno v:
Transactions of the Materials Research Society of Japan. 32:903-906
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::936ac9f2e7ec16cd8e0224679e294da6
https://doi.org/10.14723/tmrsj.32.903
https://doi.org/10.14723/tmrsj.32.903
Autor:
Kouichiro Adachi, Takashi Minotani, Naoyuki Gotoh, Tetsuya Okumine, Nobutoshi Arai, Yasuhito Gotoh, Junzo Ishikawa, Hiroshi Kotaki, Toyoji Ishibashi, Hiroshi Tsuji
Publikováno v:
REVIEW OF SCIENTIFIC INSTRUMENTS. 77(3)
Two methods to form nanoparticles at a certain depth in a thin oxide layer by negative-ion implantation into the oxide layer of silicon substrate have been investigated. One method is by implantation at a low energy and the other is by a thermal diff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::37d25ac032e505a5ea0a9aabc34b51a5
http://hdl.handle.net/2433/39814
http://hdl.handle.net/2433/39814
Autor:
Junzo Ishikawa, Takashi Minotani, Nobutoshi Arai, Yasuhito Gotoh, Kouichiro Adachi, Naoyuki Gotoh, Hiroshi Kotaki, Tetsuya Okumine, Toyotsugu Ishibashi, Hiroshi Tsuji
Publikováno v:
AIP Conference Proceedings.
We have investigated thermal diffusion behavior of implanted Ag atoms in SiO2 by using a high‐resolution RBS method in the formation process of monolayered Ag nanoparticles. Ag atoms were implanted by negative ion implantation at 10 keV with 5×101
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7081164e0bc43ece64836086dce30b59
https://doi.org/10.1063/1.2401516
https://doi.org/10.1063/1.2401516