Zobrazeno 1 - 10
of 95
pro vyhledávání: '"Takashi Matsumae"'
Autor:
Yuichi Kurashima, Atsuhiko Maeda, Naoto Oshima, Taisei Motomura, Takashi Matsumae, Mitsuhiro Watanabe, Hideki Takagi
Publikováno v:
Sensors, Vol 24, Iss 12, p 4000 (2024)
In recent years, there has been significant interest in quantum technology, characterized by the emergence of quantum computers boasting immense processing power, ultra-sensitive quantum sensors, and ultra-precise atomic clocks. Miniaturization of qu
Externí odkaz:
https://doaj.org/article/ce45323a51224ba0b39d3b52e972929c
Autor:
Shingo Kariya, Takashi Matsumae, Yuichi Kurashima, Hideki Takagi, Masanori Hayase, Eiji Higurashi
Publikováno v:
Microsystems & Nanoengineering, Vol 8, Iss 1, Pp 1-9 (2022)
Abstract In this study, we developed a metal multilayer that can provide hermetic sealing after degassing the assemblies and absorbing the residual gases in the package. A package without a leak path was obtained by the direct bonding of the Au/Pt/Ti
Externí odkaz:
https://doaj.org/article/1934047a90654717951cb5383ad1a301
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-7 (2021)
Abstract An InP substrate was directly bonded on a diamond heat spreader for efficient heat dissipation. The InP surface activated by oxygen plasma and the diamond surface cleaned with an NH3/H2O2 mixture were contacted under atmospheric conditions.
Externí odkaz:
https://doaj.org/article/49f74232da0649b3aacdcecb203a17dd
Autor:
Yuichi Kurashima, Taisei Motomura, Shinya Yanagimachi, Takashi Matsumae, Mitsuhiro Watanabe, Hideki Takagi
Publikováno v:
Sensors, Vol 23, Iss 2, p 1040 (2023)
In this study, we design a highly efficient plasma source using a magnetic mirror trap with two opposing permanent magnets for a miniature high-efficiency ion pump. First, we simulated the distribution of the magnetic field line formed by the propose
Externí odkaz:
https://doaj.org/article/c647146be6b84a1e906750abba97783c
Autor:
Phongsaphak Sittimart, Shinya Ohmagari, Takashi Matsumae, Hitoshi Umezawa, Tsuyoshi Yoshitake
Publikováno v:
AIP Advances, Vol 11, Iss 10, Pp 105114-105114-6 (2021)
Heterojunctions consisting of p-type diamond substrates and thin exfoliated n-type β-Ga2O3 layers were fabricated at a low temperature using a direct-bonding technique. We have fabricated p+-diamond/n-Ga2O3 (p+–n) and p-diamond/n-Ga2O3 (p–n) str
Externí odkaz:
https://doaj.org/article/3186b059128246979493561e1092d40d
Autor:
Takashi Matsumae, Shingo Kariya, Yuichi Kurashima, Le Hac Huong Thu, Eiji Higurashi, Masanori Hayase, Hideki Takagi
Publikováno v:
Sensors, Vol 22, Iss 21, p 8144 (2022)
This study demonstrates room-temperature bonding using a getter layer for the vacuum packaging of microsystems. A thick Ti layer covered with an Au layer is utilized as a getter layer because it can absorb gas molecules in the package. Additionally,
Externí odkaz:
https://doaj.org/article/69949db2ed5b4198a36f19170a60c5ec
Autor:
Michitaka Yamamoto, Takashi Matsumae, Yuichi Kurashima, Hideki Takagi, Tadatomo Suga, Seiichi Takamatsu, Toshihiro Itoh, Eiji Higurashi
Publikováno v:
Micromachines, Vol 11, Iss 5, p 454 (2020)
Au-Au surface activated bonding (SAB) using ultrathin Au films is effective for room-temperature pressureless wafer bonding. This paper reports the effect of the film thickness (15–500 nm) and surface roughness (0.3–1.6 nm) on room-temperature pr
Externí odkaz:
https://doaj.org/article/0782bf741c86427092e05bf6c0776839
Autor:
Michitaka Yamamoto, Takashi Matsumae, Yuichi Kurashima, Hideki Takagi, Tadatomo Suga, Toshihiro Itoh, Eiji Higurashi
Publikováno v:
Micromachines, Vol 10, Iss 2, p 119 (2019)
Au⁻Au surface activated bonding is promising for room-temperature bonding. The use of Ar plasma vs. O2 plasma for pretreatment was investigated for room-temperature wafer-scale Au⁻Au bonding using ultrathin Au films (2 plasma is their surface act
Externí odkaz:
https://doaj.org/article/1cff562049924e858b9d4e5101a6216d
Publikováno v:
ECS Transactions. 111:53-60
For the next-generation semiconductor devices, our research group has developed direct bonding techniques of wide-bandgap materials, including SiC, Ga2O3, and diamond. It is known that the semiconductor substrates activated by oxygen plasma can form
Publikováno v:
Scripta Materialia. 191:52-55
Direct bonding of a diamond (100) substrate and a Si wafer was achieved at 250°C under atmospheric conditions. Prior to the bonding process, the diamond substrate was treated with H2SO4/H2O2 and NH3/H2O2 mixtures, whereas the Si wafer was irradiated