Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Takashi Kawanoue"'
Publikováno v:
IEICE Electronics Express. 2:254-259
Cu gate metal oxide semiconductor (MOS) capacitors with and without thin chemical vapor deposition (CVD) TiSiN diffusion barrier were subjected to bias temperature stress (BTS) conditions. Cu drift flux for the MOS capacitor with CVD TiSiN diffusion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf3d7f952a5b783c878145f66270cbf7
https://doi.org/10.1587/elex.2.254
https://doi.org/10.1587/elex.2.254
Autor:
Takashi Kawanoue, Hisashi Kaneko
Publikováno v:
Materia Japan. 36:306-310
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c54583143d775e08b90efc4e69013295
https://doi.org/10.2320/materia.36.306
https://doi.org/10.2320/materia.36.306
Publikováno v:
Journal of Applied Physics. 74:4423-4429
A novel resistometric technique enables the investigation of single void nucleation and growth induced by electromigration (EM) for aluminum (Al) lines having a perfect bamboo structure in comparison with single‐crystal Al lines. Fine tungsten (W)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fac5d431faf6705a10005639400ee1f
https://doi.org/10.1063/1.354413
https://doi.org/10.1063/1.354413
Autor:
Masaaki Hatano, T. Oki, Atsuko Sakata, Masahiko Hasunuma, Takashi Kawanoue, N. Yamada, Masaki Yamada, S. Kato, Hiroshi Toyoda, T. Fujimaki, Kazuyuki Higashi, Junichi Wada, H. Yamaguchi, Naofumi Nakamura, Y. Yano
Publikováno v:
2008 International Interconnect Technology Conference.
This paper proposes highly reliable, low resistance and cost effective Cu interconnect system for 45nm CMOS device and beyond. Overhang formation and Cu line resistance increase by deposition process variation are serious problems for titanium (Ti) b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::981982eae28e9d26cf1f7197f24eb2b1
https://doi.org/10.1109/iitc.2008.4546956
https://doi.org/10.1109/iitc.2008.4546956
Autor:
Hisashi Kaneko, Masami Miyauchi, Atsuhito Sawabe, Takashi Kawanoue, Yoshiko Kohanawa, Masahiko Hasunuma, Shuichi Komatsu
Publikováno v:
International Technical Digest on Electron Devices Meeting.
An excellent ability to withstand stress-induced failure and electromigration failure is demonstrated for single-crystal Al lines. In both single-crystal and polycrystalline Al lines, voids were surrounded by low surface energy planes, so that the sh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e58d45460971c6bd2d9baab65dbeb490
https://doi.org/10.1109/iedm.1989.74370
https://doi.org/10.1109/iedm.1989.74370
Autor:
Shuichi Komatsu, Hisashi Kaneko, Takashi Kawanoue, Yoshiko Kohanawa, Masahiko Hasunuma, Masami Miyauchi, Atsuhito Sawabe
Publikováno v:
28th Annual Proceedings on Reliability Physics Symposium.
Thermodynamic analysis of stress-induced voiding has indicated that a slit-like void is the origin of metal line open failures. Wedge-shaped voids nucleate initially at specific grain boundaries where
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::68d02489916ee02a96e19e33a839febd
https://doi.org/10.1109/relphy.1990.66086
https://doi.org/10.1109/relphy.1990.66086
Autor:
Sachiyo Ito, Hisashi Kaneko, Masami Miyauchi, Hiroshi Toyoda, Takashi Kawanoue, Masahiko Hasunuma
Publikováno v:
MRS Proceedings. 391
In order to clarify the relationship between Al line reliability and film microstructure, especially grain boundary structure and crystal texture, we have tested three kinds of highly textured Al lines, namely, single-crystal Al line, quasi-single-cr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c30c1003e421621a2e3dac6ad4b4c333
https://doi.org/10.1557/proc-391-335
https://doi.org/10.1557/proc-391-335
Publikováno v:
Proceedings of 1994 IEEE International Reliability Physics Symposium RELPHY-94.
A new fabrication technique for hyper-textured aluminum (Al) films has been developed by using an amorphous tantalum-aluminum (Ta-Al) underlayer. The full width at half maximum (FWHM) value of the (111) rocking curve for Al film has been attained to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22c863690eb2cef3c8211db8a6227005
https://doi.org/10.1109/relphy.1994.307839
https://doi.org/10.1109/relphy.1994.307839
Publikováno v:
AIP Conference Proceedings.
The quantitative electromigration (EM) lifetime estimation for single‐crystal aluminum (Al) lines has been carried out for the first time. The lifetime limiting factor that degrades the excellent endurance against EM for single‐crystal Al lines h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a11cc1c1a5ea1eb12a443e9576e7acc7
https://doi.org/10.1063/1.45690
https://doi.org/10.1063/1.45690