Zobrazeno 1 - 10
of 58
pro vyhledávání: '"Takashi Ipposhi"'
Publikováno v:
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).
The introduction of a recessed gate into a shallow trench isolation (STI) section used as an insulating film in a drift region of an nLDMOSFET is a well-known means of improving the trade-off between the on-resistance (R sp ) and the off-state breakd
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb3072f001eaf15d24495a3c2ff51fca
https://doi.org/10.1109/ispsd.2019.8757573
https://doi.org/10.1109/ispsd.2019.8757573
Publikováno v:
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).
In this paper, we propose a Split-Recessed-Gate LDMOS (SRG-LDMOS) which minimizes HCl degradation with negligible increase in specific on-resistance. In SRG-LDMOS structure, the gate poly is split into two parts, the primal gate on the channel and th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bda3425f4db83b9f7b15f242d15c2144
https://doi.org/10.23919/ispsd.2017.7988878
https://doi.org/10.23919/ispsd.2017.7988878
Autor:
Shunji Kubo, Tomohiro Yamashita, Shigeki Nishimoto, Takahiro Mori, Hiroki Fujii, Yoshiki Maruyama, Takahiro Maruyama, Shigeo Tokumitsu, Hiroyuki Arie, Takashi Ipposhi, Takuya Maruyama
Publikováno v:
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).
This paper proposes a 90nm bulk BiCDMOS platform for automotive applications. In this platform, two types of characteristic deep trench isolations are introduced. One has a top-to-bottom air-gap which serves as a stable isolator against high voltage.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f2c98bd79198c72a5ce759d1a8942c9
https://doi.org/10.23919/ispsd.2017.7988896
https://doi.org/10.23919/ispsd.2017.7988896
Publikováno v:
2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
This paper proposes a partially recessed-gate structure which enables to enlarge HCI lifetime of an STI-based LDMOSFET without degrading important static performances such as breakdown voltage (BV) and specific on-resistance (Rsp). This improvement i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d39abdb275d1337d8df49a688f54ce65
https://doi.org/10.1109/ispsd.2016.7520804
https://doi.org/10.1109/ispsd.2016.7520804
Publikováno v:
IEICE Electronics Express. 6:456-460
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e59ddf161bbd7efb1107b885b230c738
https://doi.org/10.1587/elex.6.456
https://doi.org/10.1587/elex.6.456
Autor:
Yusuke Morita, Ryuta Tsuchiya, Takashi Ishigaki, Y. Inoue, Shinichiro Kimura, Toshiaki Iwamatsu, Takashi Ipposhi, Nobuyuki Sugii, Toshiro Hiramoto
Publikováno v:
Japanese Journal of Applied Physics. 47:2585-2588
A fully depleted silicon-on-insulator (FD SOI) device having an ultrathin buried oxide (BOX) with a 45-nm fully silicided (FUSI) NiSi gate, and a hybrid SOI/bulk complementary metal oxide semiconductor (CMOS) integration process have been developed.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0bcd34507b7d9c608d0d8812e0d4475
https://doi.org/10.1143/jjap.47.2585
https://doi.org/10.1143/jjap.47.2585
Autor:
Mikio Tsujiuchi, Makoto Yabuuchi, Takashi Ipposhi, Yuuichi Hirano, Koji Nii, Yasumasa Tsukamoto, Takashi Terada, Kozo Ishikawa, Yukio Maki, Shigeki Obayashi, Katsumi Eikyu, Toshiaki Iwamatsu, Yasuo Inoue, Hirofumi Shinohara, T. Uchida, Hidekazu Oda
Publikováno v:
Japanese Journal of Applied Physics. 47:2092-2096
This paper presents that advanced actively body-bias controlled (Advanced ABC) technology contributes to enhancing operation margins of static random access memory (SRAM). For the first time, significant enhancement of static noise margin (SNM) is su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e37737ffe3ca7ae97ea619f279dceb54
https://doi.org/10.1143/jjap.47.2092
https://doi.org/10.1143/jjap.47.2092
Autor:
Toshiaki Iwamatsu, Shigeto Maegawa, Y. Inoue, Yukio Maki, Yasumasa Tsukamoto, A. Miyanishi, Yuichiro Ishii, Hidekazu Oda, Yuuichi Hirano, Koji Nii, Mikio Tsujiuchi, Takashi Ipposhi
Publikováno v:
IEEE Transactions on Electron Devices. 55:365-371
An actively body-bias controlled (ABC) silicon-on-insulator (SOI) static random access memory (SRAM) connecting the bodies of the access and the driver transistors with the word line is proposed to realize high-speed and low-voltage operation. We dev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2146d29de6198b2a8c5424655536afc5
https://doi.org/10.1109/ted.2007.910566
https://doi.org/10.1109/ted.2007.910566
Autor:
Toshiaki Iwamatsu, Takashi Ipposhi, Genichi Tanaka, Masaaki Iijima, Hiromi Notani, Akira Tada, Masayuki Terai, Masahiro Numa
Publikováno v:
IEICE Electronics Express. 5:354-360
Crosstalk repair by gate sizing often increases the noise on adjacent wires, and results in cyclical iterations of noise repair. We propose a Delayed Actively Body-bias Controlled (D-ABC) SOI scheme for crosstalk noise repair by providing delayed for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54c8bd7753c93111b360c47ae517e871
https://doi.org/10.1587/elex.5.354
https://doi.org/10.1587/elex.5.354
Publikováno v:
IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences. :2691-2694
Instability of SRAM memory cells derived from aggressive technology scaling has been recently one of the most significant issues. Although a 7T-SRAM cell with an area-tolerable separated read port improves read margins even at sub-1V, it unfortunatel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e237d14a8dfd3d7a32d2d4a40348c6a2
https://doi.org/10.1093/ietfec/e90-a.12.2691
https://doi.org/10.1093/ietfec/e90-a.12.2691