Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Takashi Hosoi"'
Autor:
Shingo Katayama, Masahiro Hasegawa, Naoya Ito, Takashi Hosoi, Keiichi Miyamoto, Takashi Horiuchi, Yoshiaki Suzuki, Kosuke Niwa, Hironori Unno, Kota Inoue, Tetsuya Hattori, Masaki Hirukawa, Tatsuya Sato
Publikováno v:
Artificial Organs. 42:736-745
Ligament reconstruction using a tissue-engineered artificial ligament (TEAL) requires regeneration of the ligament-bone junction such that fixation devices such as screws and end buttons do not have to be used. The objective of this study was to deve
Autor:
Elia Marin, Narifumi Kishida, Takashi Hosoi, Giuseppe Pezzotti, Wenliang Zhu, Masahiro Hasegawa, Satoshi Nakasone, Shine Tone, Akihiro Sudo
Publikováno v:
Journal of biomedical materials research. Part B, Applied biomaterialsREFERENCES. 108(7)
An analysis is presented of four short-term retrieved highly crosslinked polyethylene (HXLPE) hip liners grafted with 2-methacryloyloxyethyl phosphorylcholine (MPC) on their bearing surfaces, which were recently commercialized as a new generation of
Autor:
Masaki, Hirukawa, Shingo, Katayama, Tatsuya, Sato, Kota, Inoue, Kosuke, Niwa, Naoya, Ito, Tetsuya, Hattori, Takashi, Hosoi, Hironori, Unno, Yoshiaki, Suzuki, Masahiro, Hasegawa, Keiichi, Miyamoto, Takashi, Horiuchi
Publikováno v:
Artificial organs. 42(7)
Ligament reconstruction using a tissue-engineered artificial ligament (TEAL) requires regeneration of the ligament-bone junction such that fixation devices such as screws and end buttons do not have to be used. The objective of this study was to deve
Autor:
Takashi, HOSOI
Publikováno v:
経営研究 = The Gakusen management review. 3(2):83-97
Publikováno v:
Journal of Crystal Growth. 77:524-529
Single crystal films of (111)GaAs have been grown onto (0001)Al 2 O 3 substrates by a low pressure MOCVD method. Using a three-step growth procedure, high quality heteroepitaxial growth of GaAs has been achieved by using an annealed buffer layer of
Publikováno v:
Journal of Applied Physics. 57:2072-2076
p‐type metal‐oxide‐semiconductor (MOS) capacitors with various oxide thickness (less than 200 A) are stressed by Fowler–Nordheim (F–N) tunneling constant current with negative gate bias, and high frequency and low frequency capacitance‐vo