Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Takashi Futatsuki"'
Publikováno v:
Applied Surface Science. 256:6512-6517
The oxidation process on silicon carbide (SiC) surfaces is important for wide bandgap power semiconductor devices. We investigated SiC oxidation using supercritical water (SCW) at high pressure and temperature and found that a SiC surface can be easi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5c3e396d84a42b4530ab9d3f23acbff
https://doi.org/10.1016/j.apsusc.2010.04.039
https://doi.org/10.1016/j.apsusc.2010.04.039
Autor:
Takashi FUTATSUKI
Publikováno v:
Journal of The Surface Finishing Society of Japan. 60:98-102
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d256ae64130c61aa895ebaf7df2eeb3b
https://doi.org/10.4139/sfj.60.98
https://doi.org/10.4139/sfj.60.98
Publikováno v:
SHINKU. 46:44-48
Preliminary experiments on Perfluorocompounds (PFCs) separation have been performed by Continuous Circulation Chromatograph method (C3 method) which was developed for the separation of H2/He mixed gas in a fuel cycle of the fusion reactor. In these e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::663f67e83296fd2e83e7f3c3f3db6410
https://doi.org/10.3131/jvsj.46.44
https://doi.org/10.3131/jvsj.46.44
Autor:
Takashi Futatsuki, Nahomi Aoto, Yasuhiko Kasama, Takashi Imaoka, Shinya Yamasaki, Yukimari Yamashita, Hidemitsu Aoki, Koji Yamanaka, Kenichi Mitsumori
Publikováno v:
Langmuir. 15:4165-4170
Electrolyzed water (EW) has been applied to the wet cleaning in ultra-large-scale integration (ULSI) and liquid-crystal display (LCD) manufacturing processes. For supplying ultrapure EW as cleaning solutions in this field, an electrolytic cell compos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e03ec673a0abef66300c7c989bddc99
https://doi.org/10.1021/la981153r
https://doi.org/10.1021/la981153r
Autor:
Masaaki Oda, Tadahiro Ohmi, Eiji Fuchita, Hitoshi Morinaga, Takashi Futatsuki, Chikara Hayashi
Publikováno v:
Journal of The Electrochemical Society. 142:966-970
The diameter of particles which adversely affects the yield has been shrinking as ULSI devices are more and more miniaturized. Ultrafine particles with diameters of 0.1 μm or less have become important recently. Ultrafine particles of this type are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a4e6808bbed98cb43d3bf74952b76d4
https://doi.org/10.1149/1.2048569
https://doi.org/10.1149/1.2048569
Autor:
Takashi Futatsuki
Publikováno v:
Ultraclean Surface Processing of Silicon Wafers ISBN: 9783642082726
Quite some time has passed since it was pointed out that the wafer surface and Si—SiO2 interface micro-roughness exert a harmful influence on MOS device characteristics [1]. Though there is no clear definition of “micro-roughness” itself, here
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c38ede3d26c81258bc00b652c6392de
https://doi.org/10.1007/978-3-662-03535-1_5
https://doi.org/10.1007/978-3-662-03535-1_5
Autor:
Takashi Imaoka, Takashi Futatsuki, Koji Yamanaka, Masaharu Nakamori, Shinya Yamasaki, Hidemitsu Aoki, Nahomi Aoto
Publikováno v:
MRS Proceedings. 477
To reduce the consumption of chemicals and ultra pure water (UPW) in cleaning processes used in device manufacturing, we have developed wet processes that use electrolytic ionized water (EIW), which is generated by the electrolysis of a diluted elect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6eb8533cbe1b53af104e6a5c8fd41911
https://doi.org/10.1557/proc-477-501
https://doi.org/10.1557/proc-477-501
Publikováno v:
Japanese Journal of Applied Physics. 49:04DF18
We have formed a SiO2 layer on a SiC surface by supercritical water (SCW) oxidation at a much lower temperature (400 °C) than that of conventional SiC thermal oxidation (1100 °C). This rapid oxidation at a low temperature is attributed to the high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f52df5b6951770b1a9770a93b91ebb4a
https://doi.org/10.1143/jjap.49.04df18
https://doi.org/10.1143/jjap.49.04df18
Publikováno v:
Japanese Journal of Applied Physics. 48:04C006
A gallium oxide layer was successfully formed on a GaN surface by saturated water vapor oxidation at a high pressure (350 °C, 16.5 MPa). Ga oxide thickness can be controlled in the 5–1,000 nm range by such oxidation process for 15 min. Saturated w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::937fa3419116e469b426217273c32ed0
https://doi.org/10.1143/jjap.48.04c006
https://doi.org/10.1143/jjap.48.04c006
Autor:
Seiichi Kondo, Takashi Futatsuki, Masayoshi Imai, Yukinari Yamashita, Morio Shiohara, Shuichi Saito
Publikováno v:
Japanese Journal of Applied Physics. 48:04C023
We investigated Cu corrosion at the via bottom of multi-layered Cu interconnects that occurred after post-etching wet cleaning and caused via open failures. We found that oxygen was dissolved into de-ionized water (DIW) on the wafer edge from the air
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5985f125b5480e78bb57d8ae0f7c707
https://doi.org/10.1143/jjap.48.04c023
https://doi.org/10.1143/jjap.48.04c023