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pro vyhledávání: '"Takashi Fukatani"'
Autor:
Hayato Iwamoto, Takashi Fukatani, Tomoki Hirano, Kenya Nishio, Yoshiya Hagimoto, Suguru Saito
Publikováno v:
Solid State Phenomena. 314:95-98
In this work, we characterized the wet chemical atomic layer etching of an InGaAs surface by using various surface analysis methods. For this etching process, H2O2 was used to create a self-limiting oxide layer. Oxide removal was studied for both HCl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e168e08193486ad23d027cc5aabb871
https://doi.org/10.4028/www.scientific.net/ssp.314.95
https://doi.org/10.4028/www.scientific.net/ssp.314.95
