Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Takashi Ebisutani"'
Publikováno v:
Journal of Crystal Growth. 138:397-402
This paper presents the growth and characterization of N-doped ZnSe grown on vicinal (100) and (211) GaAs substrates. The effects of the surface steps on the formation of deep donors are investigated by comparing PL properties and net-acceptor concen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f67505b346f7727b2cb230a3a221368
https://doi.org/10.1016/0022-0248(94)90840-0
https://doi.org/10.1016/0022-0248(94)90840-0
Publikováno v:
Applied Physics Letters. 64:1833-1835
This letter presents the growth and characterization of N‐doped ZnSe grown on (100)GaAs misoriented 4° off toward (110), and (010), and (211)GaAs‐A and ‐B. The effects of the surface steps on the formation of deep donors are investigated by co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71309a89fd72cbbcb4ae4ca70c13d877
https://doi.org/10.1063/1.111770
https://doi.org/10.1063/1.111770
Autor:
Takashi Ebisutani, Junji Kawamata, Kiyotake Tanaka, Kazuhisa Takebayashi, Ziqiang Zhu, Takafumi Yao
Publikováno v:
Applied Physics Letters. 64:91-93
This letter reports the photoluminescence (PL) properties of N‐doped ZnSe epilayers grown by molecular‐beam epitaxy using a microwave plasma source for N doping. The temperature dependence of PL spectra from N‐doped ZnSe epilayers with differen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8b277d8472a6d9ff5ca546cddb307d0
https://doi.org/10.1063/1.110878
https://doi.org/10.1063/1.110878
Autor:
Takashi Ebisutani, Hiroyuki Sato, Yasuro Kingo, Shinichi Imagi, Teruyuki Kamiya, Naochika Horio, Kazuhisa Kato, Kazuyoshi Taniguchi, Youji Yamashita
Publikováno v:
Japanese Journal of Applied Physics. 37:6301
We developed a split-flow reactor for growing epitaxial films in an atmospheric metalorganic chemical vapor deposition (MOCVD), where the reactant gas stream is separated from the wall by a buffer gas stream. This reduces the use of reactant gases, t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc854812e898a136b2b99b0fdb4a2618
https://doi.org/10.1143/jjap.37.6301
https://doi.org/10.1143/jjap.37.6301