Výsledky vyhledávání - "Takaomi Kishimoto"

Improvement in Performance of Carbon Nanotube Field-Effect Transistors on Patterned SiO2/Si Substrates

Autor: Kenzo Maehashi, Kazuhiko Matsumoto, Shin Iwasaki, Takaomi Kishimoto, Koichi Inoue, Yasuhide Ohno

Publikováno v: Journal of Electronic Materials. 39:376-380

Horizontally aligned single-walled carbon nanotubes (SWNTs) were fabricated on patterned SiO2/Si substrates with groove-and-terrace structures, which were obtained using electron-beam lithography and reactive ion etching. Scanning electron microscopy

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bd10fc9d923bdbc8a06045b0394bfcf3
https://doi.org/10.1007/s11664-009-1002-1

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Fabrication of high-performance voltage inverters based on carbon nanotube field-effect transistors

Autor: Takaomi Kishimoto, Kenzo Maehashi, Koichi Inoue, Kazuhiko Matsumoto, Yasuhide Ohno

Publikováno v: 2010 IEEE Nanotechnology Materials and Devices Conference.

We demonstrated high-performance complementary voltage inverters based on top-gated carbon nanotube field-effect transistors (CNTFETs) with SiN x passivation films. The carrier type of CNTFETs was controlled by forming condition of SiN x passivation

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::207dd60091d97bfcdd8ba80a91e337a1
https://doi.org/10.1109/nmdc.2010.5652509

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Complementary voltage inverters with large noise margin based on carbon nanotube field-effect transistors with SiNx top-gate insulators

Autor: Takaomi Kishimoto, Kazuhiko Matsumoto, Koichi Inoue, Kenzo Maehashi, Yasuhide Ohno

Publikováno v: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30:03D108

Complementary voltage inverters based on top-gated carbon nanotube field-effect transistors (CNTFETs) were fabricated with SiNx top-gate insulators. The SiNx passivation films were deposited by catalytic chemical vapor deposition, and the carrier typ

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bb23e20f2b97306cbd592446b30cfbc8
https://doi.org/10.1116/1.3697527

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Aligned Single-Walled Carbon Nanotube Arrays on Patterned SiO2/Si Substrates

Autor: Kazuhiko Matsumoto, Takaomi Kishimoto, Shin Iwasaki, Yasuhide Ohno, Koichi Inoue, Kenzo Maehashi

Publikováno v: Japanese Journal of Applied Physics. 49:06GK01

Horizontally aligned single-walled carbon nanotubes (SWNTs) were fabricated on patterned SiO2/Si substrates with groove-and-terrace or half-cylinder structures by electron-beam lithography and reactive ion etching. Scanning electron microscopy observ

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::af100bce4be2ee88d8b8535a49aa4361
https://doi.org/10.1143/jjap.49.06gk01

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Logic Gates Based on Carbon Nanotube Field-Effect Transistors with SiNx Passivation Films

Autor: Yasuhide Ohno, Takaomi Kishimoto, Kazuhiko Matsumoto, Koichi Inoue, Kenzo Maehashi

Publikováno v: Japanese Journal of Applied Physics. 49:06GG02

We demonstrated logic gates based on complementary carbon nanotube field-effect transistors (CNT-FETs) with SiN x passivation films deposited by catalytic chemical vapor deposition. The carrier type of CNT-FETs was controlled by forming SiN x passiva

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e23102166218edea48e57ae8797ae568
https://doi.org/10.1143/jjap.49.06gg02

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