Zobrazeno 1 - 10
of 47
pro vyhledávání: '"Takao Yonehara"'
Autor:
Takao Yonehara
Publikováno v:
2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).
Epitaxial Layer and Device Layer Transfer Technologies in Si and GaAs systems are reviewed from principle, processes, devices, to application systems over decades. Various applications span from SOI-Epi wafering, PV cells and Kerf-less Si PV Epi wafe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::365b7cbb2bfcc9b78b2089dffdc8c663
https://doi.org/10.1109/s3s.2015.7333529
https://doi.org/10.1109/s3s.2015.7333529
Autor:
Yasuhiko Hayashi, Takao Yonehara, Nobuhiko Sato, Shanmugam Saravanan, Takashi Jimbo, Masayoshi Umeno, Tetsuo Soga
Publikováno v:
Journal of Crystal Growth. :1450-1454
In order to reduce the residual thermal stress in GaAs layer on Si substrate, we have introduced a porous region and a thin (∼10 nm) Si layer over that in between GaAs and Si substrate. A 1-μm-thick undoped GaAs layers were grown by using chemical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2865bbec76a545965003a440fe6d7d13
https://doi.org/10.1016/s0022-0248(01)02287-4
https://doi.org/10.1016/s0022-0248(01)02287-4
Autor:
Masayoshi Umeno, Shanmugam Saravanan, Takashi Jimbo, Tetsuo Soga, Yasuhiko Hayashi, Takao Yonehara, Nobuhiko Sato
Publikováno v:
Journal of Applied Physics. 89:5215-5218
The initial growth of GaAs films on a Si/porous Si/Si (SPS) substrate has been investigated using reflection high-energy electron diffraction. The morphology and the thickness have been examined by a Nomarski optical microscope and scanning electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d1ac52fad61aaaa73a90c79428517fa0
https://doi.org/10.1063/1.1362339
https://doi.org/10.1063/1.1362339
Publikováno v:
Applied Physics Letters. 85:2815-2817
We have studied the effect of hydrogen annealing on the surface roughness of germanium (Ge) layers grown by chemical vapor deposition on silicon using atomic force microscopy and cross-sectional high resolution scanning electron microscopy (HR-SEM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8b795ea19f503bcc2de7624c3e54566
https://doi.org/10.1063/1.1802381
https://doi.org/10.1063/1.1802381
Publikováno v:
Journal of The Electrochemical Society. 142:3116-3122
A new bond and etchback silicon-on-insulator (SOI) has been proposed and demonstrated, in which epitaxial layers on porous Si are transferred by bonding and etching back porous Si. The key processes are epitaxial growth on porous Si and selective rem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2bf2d8b9b481af838f5888a49651aca
https://doi.org/10.1149/1.2048698
https://doi.org/10.1149/1.2048698
Autor:
Takao Yonehara
Publikováno v:
Hyomen Kagaku. 16:608-616
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18020feb810e7475183bdd11e415dba7
https://doi.org/10.1380/jsssj.16.608
https://doi.org/10.1380/jsssj.16.608
Autor:
Takao Yonehara, Hideya Kumomi
Publikováno v:
Journal of Applied Physics. 75:2884-2901
Solid‐state nucleation of Si crystals in a‐Si films is controlled by Si ion implantation prior to the isothermal annealing. The process of the nucleation includes a long transient period that causes the diminishing shape of the grain size distrib
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98fd16f9c908dd4bbb017ee379dccd5b
https://doi.org/10.1063/1.356182
https://doi.org/10.1063/1.356182
Publikováno v:
Thin Solid Films. 206:192-197
A uniform large area H2 plasma can be generated by a magneto-activated microwave plasma chemical vapour deposition (CVD) system. This plasma has been employed, instead of the previously used argon beam, in the diamond selective nucleation based epita
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82f06eff342ff70c20d977b806084e04
https://doi.org/10.1016/0040-6090(91)90420-3
https://doi.org/10.1016/0040-6090(91)90420-3
Publikováno v:
Applied Surface Science. :638-642
A dynamic process of nucleation and growth of CVD-Si over amorphous SiO x ( x Sentaxy where only one nucleus grows on an artificial nucleation site.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88b440a56e549adbcc671790aabe6796
https://doi.org/10.1016/0169-4332(89)90135-9
https://doi.org/10.1016/0169-4332(89)90135-9
Autor:
Hirotaro Mori, Hiroshi Kawarada, Yoshihiro Yokota, Jin Wei, Hiroshi Fujita, Jun ichi Suzuki, Akio Hiraki, Jing Sheng Ma, Takao Yonehara
Publikováno v:
Applied Surface Science. :572-579
Internal and interfacial observations of diamond particles formed by plasma-assisted CVD have been carried out using an ultra-high-voltage transmission electron microscope from especially cross-sectional view. Diamond particles deposited at lower CH
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfaec45da3b0f46816c46b8a7a653234
https://doi.org/10.1016/0169-4332(89)90124-4
https://doi.org/10.1016/0169-4332(89)90124-4