Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Takao Shiokawa"'
Autor:
Hikota Akimoto, Jun Osako, Hokuto Iijima, Takashi Meguro, Daichi Yamanaka, Takao Shiokawa, Takanori Yazaki, Masayuki Hirao
Publikováno v:
IEICE Transactions on Electronics. :376-380
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::073e85cfe30e415ae7b86343523ececa
https://doi.org/10.1587/transele.e99.c.376
https://doi.org/10.1587/transele.e99.c.376
Publikováno v:
Japanese Journal of Applied Physics. 47:1978-1981
A low-pressure chemical vapor deposition (CVD) system with in situ catalyst deposition capability has been fabricated to grow single-wall carbon nanotubes (SWNTs) in a controlled manner. To clarify the unique of the low-pressure CVD technique, the ef
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e05bfe364cf91e339e9035ba90fc10b1
https://doi.org/10.1143/jjap.47.1978
https://doi.org/10.1143/jjap.47.1978
Publikováno v:
Japanese Journal of Applied Physics. 45:L605-L607
Single-wall carbon nanotubes (SWCNTs) have been grown by catalytic chemical vapor deposition (CCVD) at 0.05 Pa using an ultrahigh-vacuum chamber. The characterization of SWCNTs grown at various temperatures and pressures has been carried out by Raman
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9e545aa0aba113e71af3e075c463bd9
https://doi.org/10.1143/jjap.45.l605
https://doi.org/10.1143/jjap.45.l605
Publikováno v:
Applied Physics Letters. 72:2481-2483
In atomic force microscope lithography using negative-type resist, the increase of the resist thickness of the exposed part before development is observed in the dose range from 8×10−13 to 10−16 cm−2. The increase is about 1 nm with a dose of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4eacfd26b944b0175f097824a75ccd2
https://doi.org/10.1063/1.121387
https://doi.org/10.1063/1.121387
Publikováno v:
Journal of Photopolymer Science and Technology. 8:677-678
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60da6417a8409da573d3983498dba2f6
https://doi.org/10.2494/photopolymer.8.677
https://doi.org/10.2494/photopolymer.8.677
Publikováno v:
Japanese Journal of Applied Physics. 33:L1313
Excimer-laser-induced deposition of silver film from a silver acetate ( CH3COOAg) has been investigated. Ultrathin silver film with a thickness of nanometer order can be obtained by excimer-laser-induced decomposition of silver acetate in air. The de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d7c4bde777760eb31a672afca30c983
https://doi.org/10.1143/jjap.33.l1313
https://doi.org/10.1143/jjap.33.l1313
Publikováno v:
Japanese Journal of Applied Physics. 33:L324
SiO2 patterns on GaAs substrates can be completely removed by KrF excimer-laser irradiation in air. The substrate surface is found to be dean, without residual SiO2 patterns or other contaminants. Free-standing SiO2 microstripes can be formed by this
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9fa6005c80646f760b28cc0a2ddd112
https://doi.org/10.1143/jjap.33.l324
https://doi.org/10.1143/jjap.33.l324
Publikováno v:
Japanese Journal of Applied Physics. 29:2864
The characteristics of the ion bombardment-enhanced etching for a GaAs substrate using Ga focused-ion-beam implantation and selective etching of HCl have been investigated. The contrast and sensitivity of the etching as a positivetype resist were est
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bcb81e8567e389d1458c61160c9a748
https://doi.org/10.1143/jjap.29.2864
https://doi.org/10.1143/jjap.29.2864
Autor:
Yukihiko Takagaki, Yoshihiko Yuba, Kenji Gamo, Kazuo Murase, Takao Shiokawa, Takeshi Kakuta, Fujio Wakaya, Sadao Takaoka, Susumu Namba
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 8:1794
GaAs/GaAlAs quantum wires with a new type of side gates are fabricated. The gate electrodes are made of two‐dimensional electron gas (2DEG) and defined by Ar ion beam etching (IBE) or Ga focused ion beams (FIB) in the heterostructure wafers. The ge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::512b1e82e49f0607ae67a104d897f91b
https://doi.org/10.1116/1.585161
https://doi.org/10.1116/1.585161
Publikováno v:
SHINKU. 25:715-718
For etching, the ion beam produced by silane gas discharge is irradiated on the Si substrate.In vertical incidence of the ion beam on Si, the film is deposited up to 3 kV which is the maximum acceleration voltage in the apparatus. By changing the ang
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3fa7265bc72251dd05a786567679c326
https://doi.org/10.3131/jvsj.25.715
https://doi.org/10.3131/jvsj.25.715