Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Takanobu Takeda"'
Publikováno v:
Journal of Micro/Nanolithography, MEMS, and MOEMS. 17:1
A photoresist with high mechanical and thermal reliability is required for redistribution layer (RDL) formation to improve integration density and realize thinner packaging for semiconductor industries. We report on a photoresist made from a mixture
Autor:
Hirokazu Hasegawa, Takanobu Takeda, Mikihito Takenaka, Naosuke Mukawa, Satoshi Akasaka, Osamu Watanabe, Shotaro Nishitsuji
Publikováno v:
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS. 7(6):589-594
We have investigated microdomain structures of novel block copolymers, poly(p-tert-pentyloxyvinylbebzene-b-p-vinylphenol) and poly(p-tert-pentyloxy-vinylbebzene-b-p-vinylphenol-b-p-tert-pentyloxyvinylbebzene) with small-angle X-ray scattering (SAXS).
Autor:
Takanobu Takeda, Takeshi Kinsho, Yoshio Kawai, Jun Hatakeyama, Mutsuo Nakashima, Toshinobu Ishihara
Publikováno v:
Journal of Photopolymer Science and Technology. 17:519-525
Polysilsesquioxane (SSQ) and alternating-copolymers of silicon containing olefin with maleic anhydride (SiMA) have been employed as backbone polymers of silicon containing bilayer resists. Several kinds of functional alkoxysilanes to form SSQ and sil
Publikováno v:
Organometallics. 13:4543-4546
Publikováno v:
The Journal of Organic Chemistry. 59:5824-5827
Publikováno v:
ChemInform. 26
Publikováno v:
ChemInform. 29
Publikováno v:
Polymer Journal. 22:429-434
Although γ-butyrolactone is not reactive enough toward the amino groups of chitosan, the β-form has been found to give N-hydroxyacylated derivatives. The conditions for the reactions were studied in detail, and efficient procedures have been establ
Publikováno v:
Journal of the American Chemical Society. 128(39)
Dimetalated amides 1 (Y = O) were generated as the synthons of carbamoyllithiums 2 (Y = O) by the reaction of isocyanates with iBu2AlTenBu and a subsequent tellurium−lithium exchange reaction. A series of amide derivatives 3 (Y = O) were obtained b
Publikováno v:
Advances in Resist Technology and Processing XX.
Silicon containing bi-layer resist systems for 193nm lithography have been developed for sub-100nm pattern fabrication. Lithographic characteristics of thin film top layer resist show the advantages of high resolution and wide process window. Thick u