Zobrazeno 1 - 10
of 110
pro vyhledávání: '"Takamura, Makoto"'
Publikováno v:
Cryst. Growth Des. 2024
We investigated the growth of twisted graphene on graphene/silicon carbide (SiC-G) templates by metal-free chemical vapor deposition (CVD) through a sequential thermal (ST) process, which exploits the ultraclean surface of SiC-G without exposing the
Externí odkaz:
http://arxiv.org/abs/2402.04778
Autor:
Tu, Ngoc Han, Yoshioka, Katsumasa, Sasaki, Satoshi, Takamura, Makoto, Muraki, Koji, Kumada, Norio
Graphene offers a possibility for actively controlling plasmon confinement and propagation by tailoring its spatial conductivity pattern. However, implementation of this concept has been hampered because uncontrollable plasmon reflection is easily in
Externí odkaz:
http://arxiv.org/abs/1911.08672
Publikováno v:
In Surface Science July 2023 733
Publikováno v:
Japanese Journal of Applied Physics 57, 110307 (2018)
We investigate plasmon resonances in graphene with periodic carrier density modulation. The period is 8 um, and each period consists of 1.7- and 6.3-um-wide ribbons with different density. Using terahertz spectroscopy, we show two plasmon modes with
Externí odkaz:
http://arxiv.org/abs/1812.01266
Autor:
Cavallucci, Tommaso, Murata, Yuya, Takamura, Makoto, Hibino, Hiroki, Heun, Stefan, Tozzini, Valentina
Publikováno v:
Carbon 130 (2018) 466-474
Quasi free standing monolayer graphene (QFMLG) grown on SiC by selective Si evaporation from the Si-rich SiC(0001) face and H intercalation displays irregularities in STM and AFM analysis, appearing as localized features, which we previously identifi
Externí odkaz:
http://arxiv.org/abs/1710.03993
Autor:
Murata, Yuya, Cavallucci, Tommaso, Tozzini, Valentina, Pavliček, Niko, Gross, Leo, Meyer, Gerhard, Takamura, Makoto, Hibino, Hiroki, Beltram, Fabio, Heun, Stefan
Publikováno v:
Nano Research 2018, 11(2) 864-873
Si dangling bonds without H termination at the interface of quasi-free standing monolayer graphene (QFMLG) are known scattering centers that can severely affect carrier mobility. In this report, we study the atomic and electronic structure of Si dang
Externí odkaz:
http://arxiv.org/abs/1706.01422
Autor:
Iagallo, Andrea, Tanabe, Shinichi, Roddaro, Stefano, Takamura, Makoto, Sekine, Yoshiaki, Hibino, Hiroki, Miseikis, Vaidotas, Coletti, Camilla, Piazza, Vincenzo, Beltram, Fabio, Heun, Stefan
Publikováno v:
Semicond. Sci. Technol. 30 (2015) 055007
The transport properties of epitaxial graphene on SiC(0001) at quantizing magnetic fields are investigated. Devices patterned perpendicularly to SiC terraces clearly exhibit bilayer inclusions distributed along the substrate step edges. We show that
Externí odkaz:
http://arxiv.org/abs/1410.2024
Autor:
Murata, Yuya, Mashoff, Torge, Takamura, Makoto, Tanabe, Shinichi, Hibino, Hiroki, Beltram, Fabio, Heun, Stefan
Publikováno v:
Applied Physics Letters 105, 221604 (2014)
We investigate the morphology of quasi-free-standing monolayer graphene (QFMLG) formed at several temperatures by hydrogen intercalation and discuss its relationship with transport properties. Features corresponding to incomplete hydrogen intercalati
Externí odkaz:
http://arxiv.org/abs/1409.0457
Autor:
Mashoff, Torge, Takamura, Makoto, Tanabe, Shinichi, Hibino, Hiroki, Beltram, Fabio, Heun, Stefan
Publikováno v:
Appl. Phys. Lett. 103, 013903 (2013)
We report on hydrogen adsorption and desorption on titanium-covered graphene in order to test theoretical proposals to use of graphene functionalized with metal atoms for hydrogen storage. At room temperature titanium islands grow with an average dia
Externí odkaz:
http://arxiv.org/abs/1312.1635
Autor:
Iagallo, Andrea, Tanabe, Shinichi, Roddaro, Stefano, Takamura, Makoto, Hibino, Hiroki, Heun, Stefan
Publikováno v:
Phys. Rev. B 88,235406 (2013)
We report on quantum-interference measurements in top-gated Hall bars of monolayer graphene epitaxially grown on the Si face of SiC, in which the transition from negative to positive magnetoresistance was achieved varying temperature and charge densi
Externí odkaz:
http://arxiv.org/abs/1311.7276