Zobrazeno 1 - 10
of 48
pro vyhledávání: '"Takamitsu Ishihara"'
Publikováno v:
AIP Advances, Vol 10, Iss 5, Pp 055020-055020-15 (2020)
As the conventional hydrogen-termination method has a limited ability to improve the interface quality between SiO2 and its Si substrate, an alternative termination method to reduce the influence of interface states is necessary. Interface engineerin
Externí odkaz:
https://doaj.org/article/d30003e984014db68e401f108b3c7835
Publikováno v:
AIP Advances, Vol 10, Iss 1, Pp 015324-015324-4 (2020)
Synthetic antiferromagnets (SAF) are widely used in magnetic tunnel junctions in order to reduce the stray field of the pinned layer. In SAF, the antiparallel spin alignment is stabilized by interlayer exchange coupling (IEC) between two ferromagneti
Externí odkaz:
https://doaj.org/article/f542bdd6a35a40b1b3afa257ee081660
Publikováno v:
MRS Bulletin. 46:1044-1052
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6835409c54b0defab692366302405fdd
https://doi.org/10.1557/s43577-021-00230-0
https://doi.org/10.1557/s43577-021-00230-0
Autor:
N. Saito, Takamitsu Ishihara, J. Kataoka, T. Enda, H. Fujiwara, T. Ueda, Hiroki Kawai, Keiji Ikeda
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
We propose material design guideline of oxide semiconductor field-effect transistor (OS-FET) based on first-principles calculation, and experimentally demonstrate excellent FET characteristics for the first time. Fluorine-doped In-Ga-Zn-O (IGZO) chan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c58e57487e6cdb040353b27a4e380663
https://doi.org/10.1109/iedm13553.2020.9372121
https://doi.org/10.1109/iedm13553.2020.9372121
Publikováno v:
AIP Advances, Vol 10, Iss 5, Pp 055020-055020-15 (2020)
As the conventional hydrogen-termination method has a limited ability to improve the interface quality between SiO2 and its Si substrate, an alternative termination method to reduce the influence of interface states is necessary. Interface engineerin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c2a6018c9bff74af958a3e8954510e0b
https://doi.org/10.1063/5.0005813
https://doi.org/10.1063/5.0005813
Autor:
Kazuya Matsuzawa, Hisayo Momose, N. Momo, Yusuke Higashi, Takamitsu Ishihara, Yuichiro Mitani, Hiroki Sasaki, Tatsuya Ohguro
Publikováno v:
IEEE Transactions on Electron Devices. 61:4197-4203
Unified transient and frequency domain noise simulation of random telegraph noise and flicker noise is conducted using a multiphonon-assisted model that considers tunneling probabilities and energy transitions of discretized traps in the gate insulat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da92945696fcae150c3b5fd43cadb83d
https://doi.org/10.1109/ted.2014.2365015
https://doi.org/10.1109/ted.2014.2365015
Publikováno v:
Journal of Applied Physics. 123:161425
Dopant segregation at Si/SiO2 interface has been a serious problem in silicon device technology. This paper reports a comprehensive density-functional study on the segregation mechanisms of boron, phosphorous, and arsenic at the Si/SiO2 interface. We
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb5b52cc25a15288aeee0653431f55a5
https://doi.org/10.1063/1.5011295
https://doi.org/10.1063/1.5011295
Publikováno v:
Japanese Journal of Applied Physics. 45:3125-3132
A unified model of roughness scattering in single-gate silicon-on-insulator metal–oxide–semiconductor field-effect transistors is proposed based on a formulation suitable for perturbation theory. This unified model includes the roughness scatteri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d6bd9e0839d681327372cabccd904f7
https://doi.org/10.1143/jjap.45.3125
https://doi.org/10.1143/jjap.45.3125
Autor:
Kazuya Matsuzawa, Takamitsu Ishihara, Yoshiyuki Matsunaga, Daisuke Matsushita, Kouichi Muraoka, Hiroshi Watanabe
Publikováno v:
IEEE Transactions on Electron Devices. 52:955-961
A long-term transient device simulation is performed using a nonvolatile memory cell. The reached transient time is over several hundred years. An accuracy of the present simulation is confirmed by obtaining quite good agreements between simulated an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0dfdd7035a2d62417802ff39a81a59a
https://doi.org/10.1109/ted.2005.846312
https://doi.org/10.1109/ted.2005.846312
Publikováno v:
IEEE Transactions on Electron Devices. 51:736-740
It has been reported that mobility in high-/spl kappa/ gate dielectric metal-insulator semiconductor field-effect transistors is lower than that in conventional metal-oxide semiconductor field-effect transistors and the reason for this degradation ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e52484fd3a6e702570e483ead1822e7f
https://doi.org/10.1109/ted.2004.826863
https://doi.org/10.1109/ted.2004.826863