Zobrazeno 1 - 10
of 39
pro vyhledávání: '"Takami Abe"'
Autor:
Shuzo Takahashi, Shuhei Kamada, Michiko Nakagawa, Tetsuya Chiba, Hiroshi Osada, Masahiro Daibo, Yasube Kashiwaba, Takami Abe, Akira Nakagawa, Shigeki Chiba, Ikuo Niikura, Y. Kashiwaba
Publikováno v:
physica status solidi c. 13:581-584
The effects of ambiences on photoconductive properties of the Zn-face of undoped ZnO and nitrogen-doped ZnO (ZnO:N) single crystals are described. Oxygen (O2) gas affected the photocurrent spectra of the Zn-face of both single crystals. The photocurr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::359af6b0691ef0130da00cb3625578f3
https://doi.org/10.1002/pssc.201510260
https://doi.org/10.1002/pssc.201510260
Autor:
Shigeki Chiba, Takami Abe, Kouichi Tsutsumi, K. Aota, Yasube Kashiwaba, Michiko Nakagawa, Y. Kashiwaba, Hiroshi Osada, T. Ojima, Masahiro Daibo, Tetsuya Chiba, Tamiya Fujiwara, Ikuo Niikura, Akira Nakagawa, Shuzo Takahashi, Michio Suzuki
Publikováno v:
Thin Solid Films. 571:615-619
Non-doped Mg x Zn 1 − x O films (Mg x Zn 1 − x O films) and nitrogen-doped Mg x Zn 1 − x O films (Mg x Zn 1 − x O:N films) were grown epitaxially on Zn faces of ZnO single crystal substrates by the plasma-assisted reactive evaporation (PARE)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c379f3f37ef3a0bb9d53393e5817aa85
https://doi.org/10.1016/j.tsf.2014.02.091
https://doi.org/10.1016/j.tsf.2014.02.091
Autor:
Tetsuya Chiba, Masahiro Daibo, Kazuyuki Meguro, Akira Nakagawa, Haruyuki Endo, Y. Kashiwaba, Shuzo Takahashi, Yasube Kashiwaba, Takami Abe, Shuzo Oshima, Syuhei Kamata, Michiko Nakagawa, Hiroshi Osada, Shigeki Chiba, Ikuo Niikura
Publikováno v:
physica status solidi c. 11:1304-1307
Nitrogen-doped (N-doped) ZnO single crystals were prepared by the hydrothermal method. Resistivity of the N-doped ZnO single crystal was 107–108 Ωcm, which was about 104-times higher than that of the non-doped ZnO single crystal. Photocurrent of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::717b5f6a2746d66b612d21d13815ee89
https://doi.org/10.1002/pssc.201300625
https://doi.org/10.1002/pssc.201300625
Autor:
K. Aota, Michiko Nakagawa, Hiroshi Osada, T. Ojima, Yasube Kashiwaba, Shigeki Chiba, Y. Kashiwaba, Masahiro Daibo, Tetsuya Chiba, Takami Abe, Akira Nakagawa, Ikuo Niikura, Shuzo Takahashi
Publikováno v:
physica status solidi c. 11:1345-1348
The band gap energy (Eg) of high-quality Mgx Zn1-xO films grown on ZnO (0001) substrates by the plasma-assisted reactive evaporation method using a ZnMg alloy could be estimated by the photocurrent (Iph). Measurement of Iph was more useful than photo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85417025301610f409c30fe11f6ebc6f
https://doi.org/10.1002/pssc.201300598
https://doi.org/10.1002/pssc.201300598
Autor:
Hiroshi Osada, Tai Yokoyama, Mio Sakuma, Yasube Kashiwaba, Masahiro Daibo, Akira Nakagawa, Takami Abe, Y. Kashiwaba, Ikuo Niikura
Publikováno v:
physica status solidi c. 11:1361-1364
High-quality non-polar ZnO (110) films were epitaxially grown on single crystal NdGaO3 (NGO) (001) substrates. The non-polar ZnO (110) films were grown by metal organic chemical vapour deposition using Zn(C5H7O2)2 and O2 gas as starting materials. X-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::410f97cfa5cf7e1cc6b3f6d8c0c6269a
https://doi.org/10.1002/pssc.201300573
https://doi.org/10.1002/pssc.201300573
Autor:
Masahiro Daibo, Hiroshi Osada, Mio Sakuma, Ikuo Niikura, Takami Abe, Akira Nakagawa, Y. Kashiwaba, Yasube Kashiwaba
Publikováno v:
Applied Surface Science. 286:126-130
Non-polar single crystal ZnO 1 0 1 ¯ 0 substrates with hydrogen peroxide (H2O2) treatment were characterized and applied to Schottky barrier diodes. Formation of a ZnO2 layer with a polycrystalline structure was confirmed by 2θ scans of X-ray diffr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f572d2934d45e33530246ea982db61ea
https://doi.org/10.1016/j.apsusc.2013.09.034
https://doi.org/10.1016/j.apsusc.2013.09.034
Publikováno v:
physica status solidi (b). 250:95-102
The present work reports the influence of indium concentration and annealing temperature (100–400 °C) on the structural and optoelectronic properties of indium selenide thin films grown using a stack elemental layer technique. The concentration of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f154ba126653437997e5459f2cbf3af6
https://doi.org/10.1002/pssb.201248268
https://doi.org/10.1002/pssb.201248268
Autor:
C. Sudha Kartha, K.P. Vijayakumar, A.K. Tyagi, A.K. Balamurugan, K. B. Jinesh, Sitaram Dash, Yasube Kashiwaba, Angel Susan Cherian, Takami Abe
Publikováno v:
Solar Energy. 86:1872-1879
In the fabrication of CuInS2/In2S3 solar cell using chemical spray pyrolysis (CSP) deposition technique, one of the major problems is the diffusion of Cu towards the In2S3 layer affecting stability and repeatability of the CuInS2/In2S3 cells. In orde
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aaf023ed887809ffa44bad33b1df84b5
https://doi.org/10.1016/j.solener.2012.02.037
https://doi.org/10.1016/j.solener.2012.02.037
Autor:
Shigeki Chiba, Takami Abe, Hiroshi Osada, T. Ojima, M. Nakagawa, Shuzo Takahashi, Masahiro Daibo, Tamiya Fujiwara, K. Yamaguchi, K. Aota, Ikuo Niikura, Akira Nakagawa, Haruyuki Endo, M. Tanaka, Y. Kashiwaba, Kazuyuki Meguro
Publikováno v:
physica status solidi c. 9:1813-1816
Epitaxial growth of high-quality Mgx Zn1-xO films on Zn faces of single crystal ZnO substrates was achieved by a plasma-assisted reactive evaporation method using ZnMg alloys. The composition of Mg of Mgx Zn1-xO films grown by using this method stron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7ecfad44b42471c7acc888910f4f157
https://doi.org/10.1002/pssc.201100565
https://doi.org/10.1002/pssc.201100565
Publikováno v:
Energy Procedia. 15:283-290
Thin film solar cells having structure CuInS2/In2S3 were fabricated using chemical spray pyrolysis (CSP) technique over ITO coated glass. Top electrode was silver film (area 0.05 cm2). Cu/In ratio and S/Cu in the precursor solution for CuInS2 were fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::45bd5dfb82cf9ed439fa4462929821b0