Fabrication of YBCO Multi-Layer Wiring With A Polished PBCO Insulator.

Autor: Wada, Yukihiko, Kuroda, Ken'ichi, Takami, Tetsuya

Publikováno v: IEEE Transactions on Applied Superconductivity; Jun2003 Part 1 of 3, Vol. 13 Issue 2, p817, 4p, 7 Black and White Photographs, 1 Diagram, 2 Charts

Realization of Low On-Resistance 4H-SiC Power MOSFETs by Using Retrograde Profile in P-Body

Autor: Fujihira, Keiko, Miura, Naruhisa, Watanabe, Tomokatsu, Nakao, Yukiyasu, Yutani, Naoki, Ohtsuka, Ken Ichi, Imaizumi, Masayuki, Takami, Tetsuya, Oomori, Tatsuo

Publikováno v: Materials Science Forum; September 2007, Vol. 556 Issue: 1 p827-830, 4p

Fabrication and Performance of 1.2 kV, 12.9 mΩcm² 4H-SiC Epilayer Channel MOSFET

Autor: Tarui, Yoichiro, Watanabe, Tomokatsu, Fujihira, Keiko, Miura, Naruhisa, Nakao, Yukiyasu, Imaizumi, Masayuki, Sumitani, Hiroaki, Takami, Tetsuya, Ozeki, Tatsuo, Oomori, Tatsuo

Publikováno v: Materials Science Forum; October 2006, Vol. 527 Issue: 1 p1285-1288, 4p

Influence of Depletion Region Length on Specific On-Resistance in SiC MOSFET

Autor: Ohtsuka, Ken Ichi, Tarui, Yoichiro, Imaizumi, Masayuki, Sugimoto, Hiroshi, Takami, Tetsuya, Ozeki, Tatsuo

Publikováno v: Materials Science Forum; September 2003, Vol. 433 Issue: 1 p765-768, 4p

Minimization of Electric Field Enhancement at Electrode Edge by Surface High Resistive Layer in Ti/4H-SiC Schottky Barrier Diode

Autor: Ohtsuka, Ken Ichi, Sugimoto, Hiroshi, Kinouchi, Shin Ichi, Tarui, Yoichiro, Imaizumi, Masayuki, Takami, Tetsuya, Ozeki, Tatsuo

Publikováno v: Materials Science Forum; April 2002, Vol. 389 Issue: 1 p1165-1168, 4p