Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Takaki Onozato"'
Autor:
Takayoshi Katase, Xinyi He, Terumasa Tadano, Jan M. Tomczak, Takaki Onozato, Keisuke Ide, Bin Feng, Tetsuya Tohei, Hidenori Hiramatsu, Hiromichi Ohta, Yuichi Ikuhara, Hideo Hosono, Toshio Kamiya
Publikováno v:
Advanced Science, Vol 8, Iss 23, Pp n/a-n/a (2021)
Abstract Introducing artificial strain in epitaxial thin films is an effective strategy to alter electronic structures of transition metal oxides (TMOs) and to induce novel phenomena and functionalities not realized in bulk crystals. This study repor
Externí odkaz:
https://doaj.org/article/00403e0efc7141679144a58ac46e3b47
Publikováno v:
APL Materials, Vol 7, Iss 2, Pp 022507-022507-7 (2019)
Wide bandgap (Eg ∼ 3.1 eV) La-doped BaSnO3 (LBSO) has attracted increasing attention as one of the transparent oxide semiconductors since its bulk single crystal shows a high carrier mobility (∼320 cm2 V−1 s−1) with a high carrier concentrati
Externí odkaz:
https://doaj.org/article/51340388ac984cb98f30a5facfdbcbdc
Publikováno v:
AIP Advances, Vol 9, Iss 2, Pp 025122-025122-6 (2019)
Electrochromic transistors (ECTs) have attracted attention as advanced memory technology because one can use both electrochromism and switching of electrical conductivity in a nonvolatile manner. Although several solid-state ECTs have been proposed s
Externí odkaz:
https://doaj.org/article/3d9872fb74fe4fe28e41776db8cb7048
Publikováno v:
International Journal of Heat and Mass Transfer. 137:263-267
Among several transition metal oxides showing metal to insulator transition, NbO2 has attracted attention as the active material of memory devices due to its high thermal stability. Although clarification of thermal conductivity (κ) is essentially i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f8a7409f4afd943caeb156ebd50c5d1
https://doi.org/10.1016/j.ijheatmasstransfer.2019.03.135
https://doi.org/10.1016/j.ijheatmasstransfer.2019.03.135
Autor:
Keisuke Ide, Takaki Onozato, Jan M. Tomczak, Terumasa Tadano, Takayoshi Katase, Yuichi Ikuhara, Hiromichi Ohta, Bin Feng, Toshio Kamiya, Xinyi He, Hideo Hosono, Hidenori Hiramatsu, Tetsuya Tohei
Publikováno v:
Advanced Science, Vol 8, Iss 23, Pp n/a-n/a (2021)
Introducing artificial strain in epitaxial thin films is an effective strategy to alter electronic structures of transition metal oxides (TMOs) and to induce novel phenomena and functionalities not realized in bulk crystals. This study reports a brea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9aae7b04a38d704db5215b1da838dae7
https://doi.org/10.1002/advs.202102097
https://doi.org/10.1002/advs.202102097
Publikováno v:
ECS Meeting Abstracts. :1971-1971
Layered compounds often show the anisotropic transport properties of both electron and phonon; the electrical/thermal conductivity along with the layer is high and the electrical/thermal conductivity perpendicular to the layer is low. For example, la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::498c52a33c89ac57c04d79ab75dca591
https://doi.org/10.1149/ma2020-02291971mtgabs
https://doi.org/10.1149/ma2020-02291971mtgabs
Publikováno v:
Japanese Journal of Applied Physics (JJAP). 59(2):024002
Today mechanical flexibility has become an important feature for electronic devices, especially in flat display panels. Here we demonstrate the device operation of a tungsten oxide-based flexible electrochromic transistor (ECT), which was fabricated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7f99cd1884e587fd7c7cc36876b0c33c
http://hdl.handle.net/2115/80345
http://hdl.handle.net/2115/80345
Publikováno v:
Advanced Materials Interfaces. 7:1901816
Layered cobalt oxides, A(x)CoO(2) (A = Li, Na, Ca, and Sr), are attracting attention as thermoelectric materials showing large thermoelectric figure of merit ZT = S-2 sigma T kappa(-1) (S: thermopower, sigma: electrical conductivity, T: absolute temp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9aafff36e04b8c92ec3c13f7cc6f1038
https://doi.org/10.1002/admi.201901816
https://doi.org/10.1002/admi.201901816
Publikováno v:
Physical Review Materials. 1
The exact intrinsic carrier effective mass ${m}^{*}$ of a well-studied transparent oxide semiconductor $\mathrm{BaSn}{\mathrm{O}}_{3}$ is unknown because the reported ${m}^{*}$ values are scattered from $0.06{m}_{0}$ to $3.7{m}_{0}$. This paper ident
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5093310e802c61fb6dab72dce443395
https://doi.org/10.1103/physrevmaterials.1.034603
https://doi.org/10.1103/physrevmaterials.1.034603
Publikováno v:
AIP Advances, Vol 9, Iss 2, Pp 025122-025122-6 (2019)
Electrochromic transistors (ECTs) have attracted attention as advanced memory technology because one can use both electrochromism and switching of electrical conductivity in a nonvolatile manner. Although several solid-state ECTs have been proposed s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f6001471d4e29d135a35fb6238818f6e
https://doi.org/10.1063/1.5089604
https://doi.org/10.1063/1.5089604