Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Takaki, Uchiyama"'
Autor:
Takaki Uchiyama, Hidenori Goto, Eri Uesugi, Akihisa Takai, Lei Zhi, Akari Miura, Shino Hamao, Ritsuko Eguchi, Hiromi Ota, Kunihisa Sugimoto, Akihiko Fujiwara, Fumihiko Matsui, Koji Kimura, Kouichi Hayashi, Teppei Ueno, Kaya Kobayashi, Jun Akimitsu, Yoshihiro Kubozono
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-10 (2023)
Abstract Doping a typical topological insulator, Bi2Se3, with Ag impurity causes a semiconductor–metal (S-M) transition at 35 K. To deepen the understanding of this phenomenon, structural and transport properties of Ag-doped Bi2Se3 were studied. Si
Externí odkaz:
https://doaj.org/article/cb1292a26c924206a4f124cb90599adb
Autor:
Eri, Uesugi, Takaki, Uchiyama, Hidenori, Goto, Hiromi, Ota, Teppei, Ueno, Hirokazu, Fujiwara, Kensei, Terashima, Takayoshi, Yokoya, Fumihiko, Matsui, Jun, Akimitsu, Kaya, Kobayashi, Yoshihiro, Kubozono
Publikováno v:
Scientific Reports
The temperature dependence of the resistivity (ρ) of Ag-doped Bi2Se3 (AgxBi2−xSe3) shows insulating behavior above 35 K, but below 35 K, ρ suddenly decreases with decreasing temperature, in contrast to the metallic behavior for non-doped Bi2Se3 a
Autor:
Takahiro Terao, Koji Kimura, Takafumi Miyazaki, Yoshihiro Kubozono, Jun Akimitsu, Xiaofan Yang, Kouichi Hayashi, Takaki Uchiyama, Hitoshi Yamaoka, Hidenori Goto, Hiromi Ota, Tong He, Naohisa Happo, Yen Fa Liao, Hirofumi Ishii, Kaya Kobayashi, Takumi Nishioka, Teppei Ueno
Publikováno v:
Physical Review B. 97
We investigated the pressure dependence of electric transport and crystal structure of Ag-doped Bi2Se3. In the sample prepared by Ag doping of Bi2Se3, the Bi atom was partially replaced by Ag, i.e., Ag0.05Bi1.95Se3. X-ray diffraction patterns of Ag0.
Autor:
Hiroshi Osada, Ritsuko Eguchi, Hidenori Goto, Hidehiko Akiyoshi, Takao Nishikawa, Yoshihiro Kubozono, Takaki Uchiyama
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
Scientific Reports
Scientific Reports
A band gap is opened in bilayer graphene (BLG) by applying an electric field perpendicular to the layer, which offers versatility and controllability in graphene-based electronics. The presence of the band gap has been confirmed using double-gated BL
Autor:
Lei Zhi, Xiaofan Yang, Yoshihiro Kubozono, Ritsuko Eguchi, Yanan Wang, Takafumi Miyazaki, Takaki Uchiyama, Yen Fa Liao, Tong He, Hirofumi Ishii, Tomoya Taguchi, Hidenori Goto, Akihisa Takai, Hitoshi Yamaoka
Publikováno v:
Materials Research Express. 6:016003
We produced a new superconducting binary elements intercalated graphite, CaxCs1−xCy, by the intercalation of Ca and Cs in highly-oriented pyrolytic graphite using the metal-alloy method. The superconducting CaxCs1−xCy sample was synthesized with
Autor:
Xiaofan Yang, Tomoya Taguchi, Yanan Wang, Tong He, Takaki Uchiyama, Akihisa Takai, Lei Zhi, Takafumi Miyazaki, Hidenori Goto, Ritsuko Eguchi, Hirofumi Ishii, Yen-Fa Liao, Hitoshi Yamaoka, Yoshihiro Kubozono
Publikováno v:
Materials Research Express; Jan2019, Vol. 6 Issue 1, p1-1, 1p