Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Takakazu Hirose"'
Autor:
Haruki Hirai, Takumi Iizawa, Tomoyuki Tamura, Masayuki Karasuyama, Ryo Kobayashi, Takakazu Hirose
Publikováno v:
Physical Review Materials. 6
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34ede41465b5ec2d1169badd4e71a703
https://doi.org/10.1103/physrevmaterials.6.115601
https://doi.org/10.1103/physrevmaterials.6.115601
Autor:
Takakazu Hirose, Kohta Takahashi, Takumi Matsuno, Yusuke Osawa, Masahiro Furuya, Reiko Sakai, Chinami Matsui, Hiroyuki Koide
Publikováno v:
Journal of The Electrochemical Society; Sep2020, Vol. 167 Issue 12, p1-6, 6p
Publikováno v:
Journal of Magnetism and Magnetic Materials. 286:124-127
Magnetic tunnel transistors were prepared with different Schottky junctions: Pt/n-Si, Au/n-Si and NiFe/n-Si. The magneto-current as well as the collector current was found to depend strongly on the Schottky junction used. The largest collector curren
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6446d2adfb7050a1bf4d36ac400490fb
https://doi.org/10.1016/j.jmmm.2004.09.051
https://doi.org/10.1016/j.jmmm.2004.09.051
Publikováno v:
physica status solidi (b). 241:1502-1505
The transfer ratio and the magneto-current were investigated for magnetic tunnel transistors with various Schottky materials. In the transistor with a Au/n-Si Schottky junction, a transfer ratio of 0.81 × 10−4 and a magneto–current of 280% were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1b5061ce77ccb0578fa2aaffb373a7c
https://doi.org/10.1002/pssb.200304523
https://doi.org/10.1002/pssb.200304523
Publikováno v:
Japanese Journal of Applied Physics. 42:L1009-L1011
Magnetoelectronic properties were investigated for a Co/AlOx/NiFe/Au/n-Si diode structure utilizing the two-point-probe method at 77 K. In this system, electrons were transported from the Co layer to the n-Si substrate through the AlOx tunneling barr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdbc22c645ce59296ac1a0e2783bd2a3
https://doi.org/10.1143/jjap.42.l1009
https://doi.org/10.1143/jjap.42.l1009
Autor:
H. Nakanishi, Mutsuko Jimbo, Yuji Fujiwara, Takakazu Hirose, H. Omae, Shigeru Shiomi, T. Kobayashi
Publikováno v:
Transactions of the Magnetics Society of Japan. 4:308-309
The transfer ratio and magneto current were investigated for magnetic tunnel transistors (MTTs) with two different emitter tunnel junctions. The tunnel resistance-area products were 4×105 (Sample A) and 12×105Ωμm2 (Sample B). The transfer ratio o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80b8e4a2872d4a6c2c071613a77f3058
https://doi.org/10.3379/tmjpn2001.4.308
https://doi.org/10.3379/tmjpn2001.4.308
Autor:
Takakazu Hirose, Mutsuko Jimbo, Yuji Fujiwara, Tadashi Kobayashi, Morio Masuda, Shigeru Shiomi
Publikováno v:
Japanese Journal of Applied Physics. 43:2479
The hot electron transport phenomenon has been investigated in magnetic tunnel transistors with various base layer thicknesses. In terms of Au layer thickness, the magneto-current and the transfer ratio were at a maximum when the Au layer thickness w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8dde560b3bc016a0d243edb893d0c80
https://doi.org/10.1143/jjap.43.2479
https://doi.org/10.1143/jjap.43.2479