Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Takahito Kitada"'
Autor:
Yui Muto, Takumi Nakaso, Motoya Shinozaki, Takumi Aizawa, Takahito Kitada, Takashi Nakajima, Matthieu R. Delbecq, Jun Yoneda, Kenta Takeda, Akito Noiri, Arne Ludwig, Andreas D. Wieck, Seigo Tarucha, Atsunori Kanemura, Motoki Shiga, Tomohiro Otsuka
Publikováno v:
APL Machine Learning, Vol 2, Iss 2, Pp 026110-026110-7 (2024)
Charge state recognition in quantum dot devices is important in the preparation of quantum bits for quantum information processing. Toward auto-tuning of larger-scale quantum devices, automatic charge state recognition by machine learning has been de
Externí odkaz:
https://doaj.org/article/4c4beac6aef9401490f65bd36d603b10
Autor:
Toshiaki Kato, Takahito Kitada, Mizuki Seo, Wakana Okita, Naofumi Sato, Motoya Shinozaki, Takaya Abe, Takeshi Kumasaka, Takumi Aizawa, Yui Muto, Toshiro Kaneko, Tomohiro Otsuka
Publikováno v:
Communications Materials, Vol 3, Iss 1, Pp 1-7 (2022)
Graphene nanoribbons can be used as quantum dot devices, but scalable fabrication methods are needed. Here, a nanobar technique is used to synthesize graphene nanoribbon-based quantum dot devices with a 56 % yield and stable orbital level splitting u
Externí odkaz:
https://doaj.org/article/ddd5cce9bdf64eda89eb17ba75ceb37b
Autor:
Motoya Shinozaki, Junta Igarashi, Shuichi Iwakiri, Takahito Kitada, Keisuke Hayakawa, Butsurin Jinnai, Tomohiro Otsuka, Shunsuke Fukami, Kensuke Kobayashi, Hideo Ohno
Publikováno v:
Physical Review B. 107
Publikováno v:
Scientific Reports, Vol 10, Iss 1, Pp 1-5 (2020)
Scientific Reports
Scientific Reports
GaN and the heterostructures are attractive in condensed matter science and applications for electronic devices. We measure the electron transport in GaN/AlGaN field-effect transistors (FETs) at cryogenic temperature. We observe formation of quantum
Autor:
Yui Muto, Tomohiro Otsuka, Arne Ludwig, Matthieu R. Delbecq, Takashi Nakajima, Andreas D. Wieck, Seigo Tarucha, Takahito Kitada, Takumi Ito, Akito Noiri, Jun Yoneda, Kenta Takeda, Motoya Shinozaki
We investigate gate voltage dependence of electrical readout noise in high-speed rf reflectometry using gallium arsenide quantum dots. The fast Fourier transform spectrum from the real time measurement reflects build-in device noise and circuit noise
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ac38fd8686c1696af7e9f28bef53c09d