Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Takahisa Doi"'
Autor:
Takahisa Doi, M. Koguchi
Publikováno v:
Surface Science. 653:226-236
The topography of a Si(001) vicinal surface is investigated using reflection electron microscopy (REM) during alternating current (AC) heating of the surface in ultra-high vacuum. The normal direction of the surface is slightly tilted from the [001]
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8153d96c6ce7a5705b2ea5e5dc2c327
https://doi.org/10.1016/j.susc.2016.06.015
https://doi.org/10.1016/j.susc.2016.06.015
Publikováno v:
Surface Science. 499:161-173
The topography of a Si(0 0 1) vicinal surface is investigated by using reflection electron microscopy after alternating current (AC) heating at temperatures up to about 1140 °C. At temperatures below 850 °C, AC heating produces 1×2 surfaces that c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::074b5c3ce6cce24022bd831a3d50dc18
https://doi.org/10.1016/s0039-6028(01)01771-x
https://doi.org/10.1016/s0039-6028(01)01771-x
Publikováno v:
Surface Science. 426:1-7
The structure of Si layers deposited on a Si(001) 2×1 surface at room temperature is investigated by reflection electron microscopy. After the sample heating by direct current, the structure of the deposited layer returns to the 2×1 surface at cove
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3792dc424a404ba6c77ed29cc3fcc66f
https://doi.org/10.1016/s0039-6028(99)00172-7
https://doi.org/10.1016/s0039-6028(99)00172-7
Publikováno v:
Surface Science. 376:87-91
A clean Si(111) surface has been investigated by scanning reflection electron microscopy (REM) with an electron beam incident at grazing angles onto the surface. The signal of the absorbed current into the sample (the absorption current image) is use
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3345c53093eba3f9ef71c13f96ab3dca
https://doi.org/10.1016/s0039-6028(96)01313-1
https://doi.org/10.1016/s0039-6028(96)01313-1
Publikováno v:
Surface Science. :868-872
The diffusion of Si adsorbates deposited on a Si(001) clean surface is investigated by using a reflection electron microscope (REM). When the sample is heated by radiative heating and/or direct current heating, the denuded zones are created at the te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b957f1e9a943303cab3455cb7e1d72e
https://doi.org/10.1016/0039-6028(96)00280-4
https://doi.org/10.1016/0039-6028(96)00280-4
Publikováno v:
Surface Science. 351:135-140
When a Si(001) sample was heated to temperatures above 1500 K by passing a direct current through it, we observed the migration of a Si microcluster on the Si(001) surface by using an electron microscope. This microcluster migrates toward the anode s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c83b371fd59f38db6b2b79d0d47a2515
https://doi.org/10.1016/0039-6028(95)01358-x
https://doi.org/10.1016/0039-6028(95)01358-x
Publikováno v:
Surface Science. 343:24-30
The diffusion of Si adsorbates deposited on a Si(001) surface is studied by a reflection electron microscope (REM). The diffusion constants are obtained from the diffused lengths of the Si adsorbates. The activation energy of diffusion is determined
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b72b4f955db7e4d8aa67715fb3b95829
https://doi.org/10.1016/0039-6028(95)00748-2
https://doi.org/10.1016/0039-6028(95)00748-2
Autor:
Takahisa Doi, Akitoshi Ishizaka
Publikováno v:
Philosophical Magazine Letters. 65:95-100
The temperature dependence of Si(111) surface structures has been studied. Reflection electron diffraction intensities have been measured for Si(111) clean surfaces as a function of temperature. Diffraction intensities change at 830,1110 and 1410 K,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ca04a9ed8ad58dd1de5db7161a64c09
https://doi.org/10.1080/09500839208207520
https://doi.org/10.1080/09500839208207520
Publikováno v:
Applied Physics Letters. 74:3675-3677
Molecular beam epitaxy (MBE) of Si atoms onto a Si(001) 1×2 surface is investigated using reflection electron microscopy. A 1×2 surface with wide 1×2 and narrow 2×1 terraces is prepared by passing a direct current from the down side to the up sid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd2be098d8e4b7802345624718baaf33
https://doi.org/10.1063/1.123218
https://doi.org/10.1063/1.123218
Publikováno v:
MRS Proceedings. 1026
The spatial distribution of flux pinning centers in YBa2Cu3O7 (YBCO) coated conductors significantly affects the conductive properties. Nanoparticles acting as pinning centers can be intentionally introduced into the structure by chemical doping. In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b02d857143ce8e274f6cff6ec1ef21e
https://doi.org/10.1557/proc-1026-c07-06
https://doi.org/10.1557/proc-1026-c07-06