Zobrazeno 1 - 10
of 65
pro vyhledávání: '"Takahiro Tsukamoto"'
Publikováno v:
The Journal of Physical Chemistry C. 125:14117-14121
Autor:
Takahiro Tsukamoto, Kento Ikeno, Nobumitsu Hirose, Akifumi Kasamatsu, Toshiaki Matsui, Yoshiyuki Suda
Publikováno v:
Journal of Crystal Growth. 604:127045
Publikováno v:
Scientific Reports, Vol 10, Iss 1, Pp 1-9 (2020)
Scientific Reports
Scientific Reports
We propose a process for easily fabricating a unique one-dimensional fullerene crystal, i.e., a fullerene finned-micropillar (FFMP). To fabricate a one-dimensional fullerene crystal more easily than when using current processes, fullerene was first a
Autor:
Izuru Maeda, Takahiro Tsukamoto
Publikováno v:
SSRN Electronic Journal.
Autor:
Takahiro Tsukamoto, Yosuke Aoyagi, Shouta Nozaki, Nobumitsu Hirose, Akifumi Kasamatsu, Toshiaki Matsui, Yoshiyuki Suda
Publikováno v:
Journal of Crystal Growth. 600:126900
Publikováno v:
Journal of the Society of Materials Science, Japan. 68:106-113
Autor:
Takahiro Tsukamoto, Izuru Maeda
Publikováno v:
SSRN Electronic Journal.
Publikováno v:
Thin Solid Films. 726:138646
Lattice-matched Ge/GeSiSn layers were formed on Ge substrates by sputter epitaxy, and the effects of the thicknesses of the Ge and GeSiSn layers on crystallinity of the Ge/GeSiSn layers were examined by Raman spectroscopy. First, a GeSiSn layer was f
Publikováno v:
Journal of Crystal Growth. 463:67-71
We investigated a method of controlling the crystallinity of an n-type SiC (n-SiC) layer grown on a p-type 4°-off-axis Si(1 1 1) (p-Si) substrate by our sputtering method for use as SiC/Si devices. An n-SiC layer grown on p-Si at 810 °C exhibits co
Autor:
Akifumi Kasamatsu, Nobumitsu Hirose, Toshiaki Matsui, Takahiro Tsukamoto, Takashi Mimura, Yoshiyuki Suda
Publikováno v:
Thin Solid Films. 592:34-38
The formation of Ge layers on Si (001) substrates with 3.5 Ω cm resistivity by the sputter epitaxy method with DC magnetron sputtering has been investigated. The surface morphology of Ge layers grown on Si substrates depends on the sputtering power