Zobrazeno 1 - 10
of 87
pro vyhledávání: '"Takahiro Tsukamoto"'
Publikováno v:
The Journal of Physical Chemistry C. 125:14117-14121
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f8c42eef1cc936a4e64616e65c56dbe
https://doi.org/10.1021/acs.jpcc.1c03567
https://doi.org/10.1021/acs.jpcc.1c03567
Publikováno v:
Scientific Reports, Vol 10, Iss 1, Pp 1-9 (2020)
Scientific Reports
Scientific Reports
We propose a process for easily fabricating a unique one-dimensional fullerene crystal, i.e., a fullerene finned-micropillar (FFMP). To fabricate a one-dimensional fullerene crystal more easily than when using current processes, fullerene was first a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6fd41571b2bba1fc89cd719c093eb3d8
http://link.springer.com/article/10.1038/s41598-020-76252-6
http://link.springer.com/article/10.1038/s41598-020-76252-6
Autor:
Izuru Maeda, Takahiro Tsukamoto
Publikováno v:
SSRN Electronic Journal.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8f46171104fa0c120bb2e5b919445c4
https://doi.org/10.2139/ssrn.4284975
https://doi.org/10.2139/ssrn.4284975
Autor:
Takahiro Tsukamoto, Kento Ikeno, Nobumitsu Hirose, Akifumi Kasamatsu, Toshiaki Matsui, Yoshiyuki Suda
Publikováno v:
Journal of Crystal Growth. 604:127045
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f84dd9ad1911507ff76adf24a612e711
https://doi.org/10.1016/j.jcrysgro.2022.127045
https://doi.org/10.1016/j.jcrysgro.2022.127045
Autor:
Takahiro Tsukamoto, Yosuke Aoyagi, Shouta Nozaki, Nobumitsu Hirose, Akifumi Kasamatsu, Toshiaki Matsui, Yoshiyuki Suda
Publikováno v:
Journal of Crystal Growth. 600:126900
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5dad73849bb79ce33eb50f8f44b0634a
https://doi.org/10.1016/j.jcrysgro.2022.126900
https://doi.org/10.1016/j.jcrysgro.2022.126900
Publikováno v:
Journal of the Society of Materials Science, Japan. 68:106-113
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba0546e7a734e41bd8e5f3bb0c4b2d73
https://doi.org/10.2472/jsms.68.106
https://doi.org/10.2472/jsms.68.106
Autor:
Takahiro Tsukamoto, Izuru Maeda
Publikováno v:
SSRN Electronic Journal.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ff33f8140c1c5a01f4af2f7270b5d88
https://doi.org/10.2139/ssrn.3993631
https://doi.org/10.2139/ssrn.3993631
Publikováno v:
Journal of Crystal Growth. 463:67-71
We investigated a method of controlling the crystallinity of an n-type SiC (n-SiC) layer grown on a p-type 4°-off-axis Si(1 1 1) (p-Si) substrate by our sputtering method for use as SiC/Si devices. An n-SiC layer grown on p-Si at 810 °C exhibits co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4402a01a073e6abb7deba5366d197ea
https://doi.org/10.1016/j.jcrysgro.2017.01.042
https://doi.org/10.1016/j.jcrysgro.2017.01.042
Publikováno v:
Thin Solid Films. 726:138646
Lattice-matched Ge/GeSiSn layers were formed on Ge substrates by sputter epitaxy, and the effects of the thicknesses of the Ge and GeSiSn layers on crystallinity of the Ge/GeSiSn layers were examined by Raman spectroscopy. First, a GeSiSn layer was f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75ae33c016cc374e46aaa5c3f300b544
https://doi.org/10.1016/j.tsf.2021.138646
https://doi.org/10.1016/j.tsf.2021.138646
Autor:
Yuki Maeda, Nobumitsu Hirose, Takahiro Tsukamoto, Akifumi Kasamatsu, Minoru Wakiya, Yoshiyuki Suda, Toshiaki Matsui, Ayaka Shinkawa
Publikováno v:
Japanese Journal of Applied Physics. 59:080903
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a84f060cb6688faa31f7c2806f4d7ca
https://doi.org/10.35848/1347-4065/aba379
https://doi.org/10.35848/1347-4065/aba379