Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Takahiro Sugimura"'
Autor:
Keiji Wada, Satomi Itoh, Hisato Michikoshi, Takahiro Sugimura, Hideto Tamaso, Toru Hiyoshi, Takashi Tsuno, Jun Genba, Hitoki Tokuda, Yasuki Mikamura, Shigenori Toyoshima, Kenji Kanbara
Publikováno v:
Materials Science Forum. :592-595
Characteristics of SiC MOSFETs and SBDs with 3.3 kV-class have been presented. Static Characteristics of the MOSFET showed a specific on-resistance of 14.2 mΩ cm2. A breakdown voltage of 3850 V is obtained by using the dose optimized edge terminatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36dabff9260d41783edb732b9d2b6ee7
https://doi.org/10.4028/www.scientific.net/msf.821-823.592
https://doi.org/10.4028/www.scientific.net/msf.821-823.592
Publikováno v:
Journal of Electronic Materials. 34:1586-1590
This paper investigates a set of theoretical equations for analyzing the thermal properties of isotropic conductive adhesives (ICAs) containing several types of Cu filler particles. The thermal conductivity of ICAs containing randomly dispersed fille
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53cd669a71b089a1883831474546bda6
https://doi.org/10.1007/s11664-005-0169-3
https://doi.org/10.1007/s11664-005-0169-3
Publikováno v:
Journal of Japan Institute of Electronics Packaging. 7:147-155
等方性導電性接着剤の熱伝導率および熱膨張係数の理論予測手法を検討するために, 球状およびフレーク状Cu粒子を添加した導電性接着剤を試作し, その熱物性解析を行った。その結果,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a8465328282e8b6baa4adc7011454d7
https://doi.org/10.5104/jiep.7.147
https://doi.org/10.5104/jiep.7.147