Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Takahiro Shiihara"'
Publikováno v:
Journal of Applied Physics. 129:013901
Using vertical spin-valve devices, we experimentally investigate the room-temperature spin diffusion length in an undoped p-Ge layer grown on ferromagnetic Fe 3Si. Because low-temperature molecular beam epitaxy techniques enable us to grow vertically
Autor:
Takahiro Shiihara, Michihiro Yamada, Kohei Hamaya, Atsuya Yamada, Shinya Yamada, Mizuki Honda
Publikováno v:
Applied Physics Express. 13:023001
Publikováno v:
Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials.