Zobrazeno 1 - 8 of 8 pro vyhledávání: '"Takahiro Sada"'
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Akademický článek
Initial stiffness estimation method for wooden house considering non‐structural elements using design information and microtremor measurement
Autor: Shinta Yoshitomi, Takahiro Sada, Takuro Habara
Publikováno v: Japan Architectural Review, Vol 7, Iss 1, Pp n/a-n/a (2024)
Abstract In this paper, a previously proposed method for story stiffness estimation of steel residential house is extended to estimate story stiffness of wooden residential houses considering non‐structural walls based on the available design infor
Externí odkaz: https://doaj.org/article/5408f9031f42429eacf1391145cce712
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7
Dramatic enhancement of low electric-field hole mobility in metal source/drain Ge p-channel metal-oxide-semiconductor field-effect transistors by introduction of Al and Hf into SiO2/GeO2 gate stack
Autor: Hiroshi Nakashima, Keisuke Yamamoto, Dong Wang, Takahiro Sada
Publikováno v: Applied Physics Letters. 103:122106
Ge p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) are fabricated using HfGe metal source/drain contacts and an Al/SiO2/GeO2 gate stack. Following postmetallization annealing at 400 °C, the MOSFET shows peak field-effect mobil
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::33cf62e2aa24982bba44e0a5d3f3e47c
https://doi.org/10.1063/1.4821546
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8
Schottky Source/Drain Ge Metal–Oxide–Semiconductor Field-Effect Transistors with Directly Contacted TiN/Ge and HfGe/Ge Structures
Autor: Keisuke Yamamoto, Dong Wang, Syuta Kojima, Keita Sakamoto, Haigui Yang, Kenji Harada, Takeshi Yamanaka, Hiroshi Nakashima, Takahiro Sada
Publikováno v: Applied Physics Express. 5:051301
Metal/Ge contacts with high Schottky barrier heights on p- and n-Ge substrates could be formed using direct sputter depositions from TiN and Hf, respectively. The barrier heights were 0.53 and 0.60 eV for the p- and n-Ge substrates, respectively, whi
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fd5e4644837adc7c4b50ac69a25c0ab6
https://doi.org/10.1143/apex.5.051301
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