Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Takahiro Ohnakado"'
Publikováno v:
IEEJ Transactions on Fundamentals and Materials. 129:746-750
Autor:
Eiji Taniguchi, S. Yamakawa, A. Furukawa, T. Murakami, Noriharu Suematsu, T. Oomori, H. Ueda, Takahiro Ohnakado
Publikováno v:
IEEE Journal of Solid-State Circuits. 39:577-584
This paper reports a 21.5-dBm power-handling 5-GHz transmit/receive CMOS switch utilizing the depletion-layer-extended transistor (DET), which possesses high effective substrate resistance and enables the voltage division effect of the stacked transi
Autor:
Tatsuo Oomori, Akihiko Furukawa, Jun Tomisawa, Satoshi Yamakawa, Yasushi Hashizume, Takahiro Ohnakado, Noriharu Suematsu, Kazuyasu Nishikawa, Kazuyuki Sugahara, Takaaki Murakami
Publikováno v:
Japanese Journal of Applied Physics. 42:2077-2081
In this paper, an electrostatic-discharge (ESD) protection device for RF complementary metal oxide semiconductor (CMOS) ICs utilizing the Depletion-layer-Extended Transistor (DET) [rf1] is reported. The DET, which reduces the area component of juncti
Autor:
S. Yamakawa, Y. Yoneda, Takaaki Murakami, Hiroomi Ueda, Tatsuo Oomori, Eiji Taniguchi, Kazuyuki Sugahara, Takahiro Ohnakado, Yasushi Hashizume, M. Ono, Akihiko Furukawa, Jun Tomisawa, Noriharu Suematsu, K. Nishikawa
Publikováno v:
IEEE Electron Device Letters. 24:192-194
An optimized single-pole double-throw (SPDT) transmit/receive (T/R) switch has been fabricated using depletion-layer-extended transistors (DETs) in a 0.18 /spl mu/m CMOS process. The switch features the highest performance to date of any switch using
Autor:
Hisatoshi Hata, Tadashi Imai, Masashi Ueno, Munetaka Ueno, Yasuhiro Kosasayama, Daisuke Fujisawa, Hiroshi Ohji, Takahiro Ohnakado, Yasuaki Ohta, Haruyoshi Katayama, Ryota Sato, Tomohiro Maegawa
Publikováno v:
SPIE Proceedings.
We report the development of a 2-million-pixel, that is, a 2000 x 1000 array format, SOI diode uncooled IRFPA with 15 mm pixel pitch. The combination of the shrinkable 2-in-1 SOI diode pixel technology, which we proposed last year [1], and the uncool
Autor:
Munetaka Ueno, Takaki Sugino, Haruyoshi Katayama, Daisuke Takamuro, Tadashi Imai, Yasuhiro Kosasayama, Masashi Ueno, Hisatoshi Hata, Hiroshi Fukumoto, Tomohiro Maegawa, Kozo Ishida, Takahiro Ohnakado
Publikováno v:
SPIE Proceedings.
Scalable new SOI diode structure has been proposed and developed for beyond 17μm pixel pitch mega-pixel-class SOI diode uncooled infrared focal plane arrays (IRFPAs). Conventionally, each p + n vertical diode is formed between a p + diffusion and an
Autor:
Yasuhiro Kosasayama, Keisuke Kama, Takaki Sugino, Yasuaki Ohta, Masahiro Tsugai, Hisatoshi Hata, Takanori Ohno, Takahiro Ohnakado, Masashi Ueno, Hiroshi Fukumoto
Publikováno v:
SPIE Proceedings.
We have developed a novel readout circuit architecture realizing a TEC-less (Thermo-Electric Cooler) operation for an SOI diode uncooled infrared focal plane array (IRFPA). Through the fabrication of an SOI diode uncooled 320 x 240 IRFPA adopting the
Autor:
Y. Yoneda, Eiji Taniguchi, K. Nishikawa, H. Ueda, S. Yamakawa, Akihiko Furukawa, Takahiro Ohnakado, Masayoshi Ono, Takaaki Murakami, Y. Hashizume, Noriharu Suematsu, J. Tomisawa, K. Sugahara, Tatsuo Oomori
Publikováno v:
IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2003.
The highest performance to date of any switch using a CMOS process, with a 0.8 dB insertion-loss, 23 dB isolation and 17.4 dBm power-handling capability at 5 GHz, is accomplished with an optimized single-pole double-throw (SPDT) transmit/receive (T/R
Autor:
Tatsuo Oomori, Satoshi Yamakawa, K. Sugahara, Eiji Taniguchi, T. Murakami, K. Nishikawa, Y. Hashizume, Takahiro Ohnakado, A. Furukawa, M. Ono
Publikováno v:
2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).
A novel depletion-layer-extended transistor (DET) for the RF switch circuit is proposed in a CMOS process, which significantly reduces junction capacitance and increases GND-path resistance in the Si-substrate, with new impurity profiling. This trans
Autor:
Tatsuo Oomori, Noriharu Suematsu, Akihiko Furukawa, Takahiro Ohnakado, Satoshi Yamakawa, K. Nishikawa, Takaaki Murakami, Y. Hashizume, K. Sugahara
Publikováno v:
Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials.