Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Takahiro Kozeki"'
Autor:
Akira Takakura, Ko Beppu, Taishi Nishihara, Akihito Fukui, Takahiro Kozeki, Takahiro Namazu, Yuhei Miyauchi, Kenichiro Itami
Publikováno v:
Nature Communications, Vol 10, Iss 1, Pp 1-7 (2019)
Though single-walled carbon nanotubes should theoretically be extremely strong, it is unclear why their experimental tensile strengths are far lower and vary between nanotubes. Here, the authors directly measure the tensile strengths of individual st
Externí odkaz:
https://doaj.org/article/4ba7ec76047d42a69804ac15b7aa3e49
Autor:
Tuan-Khoa Nguyen, Ginnosuke Ina, Takahiro Namazu, Toan Dinh, Afzaal Qamar, Takahiro Kozeki, Dzung Viet Dao, Nam-Trung Nguyen, Hoang-Phuong Phan
Publikováno v:
Materials Letters. 196:280-283
Silicon carbide on insulator is a promising platform for electronic devices at high temperature as well as for opto-electrical applications. Utilizing the chemical inertness of SiC, this work presents a novel technique to form cubic-silicon carbide (
Autor:
Takahiro Namazu, Nam-Trung Nguyen, Dzung Viet Dao, Tuan-Khoa Nguyen, Afzaal Qamar, Toan Dinh, Takahiro Kozeki, Hoang-Phuong Phan
Publikováno v:
IEEE Electron Device Letters. 37:1029-1032
This letter reports on the piezoresistive effect of top–down fabricated 3C-SiC nanowires (NWs). Focused ion beam was utilized to create p-type 3C-SiC NWs from a 3C-SiC thin film with a carrier concentration of $5 \times 10^{18}$ cm $^{-3}$ epitaxia
Autor:
Dzung Viet Dao, Takahiro Namazu, Toan Dinh, Hoang-Phuong Phan, Nam-Trung Nguyen, Tatsuya Fujii, Afzaal Qamar, Takahiro Kozeki
Publikováno v:
Materials Letters. 177:80-84
In this work, we demonstrate highly thermosensitive silicon nanowires (SiNWs) for thermal-sensing applications. Crystalline Si was amorphized by Focused Ion Beam in the fabrication process of the SiNWs, and subsequently recrystallized by a thermal an
Autor:
Toan Dinh, Takahiro Kozeki, Mirko Lobino, Takahiro Namazu, Khoa Nguyen Tuan, Hoang-Phuong Phan, Dzung Viet Dao, Afzaal Qamar, Abu Riduan Md Foisal
Publikováno v:
RSC Advances. 6:87124-87127
This letter reports on cubic silicon carbide (3C–SiC) transferred on a glass substrate as an ideal platform for thermoresistive sensors which can be used for in situ temperature measurement during optical analysis. The transfer of SiC onto an insul
Autor:
Toan Dinh, Dzung Viet Dao, Takahiro Kozeki, Yong Zhu, Hoang-Phuong Phan, Takahiro Namazu, Afzaal Qamar, Nam-Trung Nguyen, Tatsuya Fujii
Publikováno v:
RSC Advances. 5:82121-82126
The piezoresistive effect in silicon nanowires (SiNWs) has attracted a great deal of interest for NEMS devices. Most of the piezoresistive SiNWs reported in the literature were fabricated using the bottom up method or top down processes such as elect
Publikováno v:
The Proceedings of the Materials and Mechanics Conference. 2015:OS1419-42
Autor:
Akira Takakura, Takahiro Kozeki, Taishi Nishihara, Kou Beppu, Kenichiro Itami, Yuhei Miyauchi, Akihito Fukui, Takahiro Namazu
Publikováno v:
The Proceedings of Mechanical Engineering Congress, Japan. 2019:J22302
Design and fabrication of electrothermal SiC nanoresonators for high-resolution nanoparticle sensing
Autor:
Dzung Viet Dao, Yong Zhu, Nam-Trung Nguyen, Toan Dinh, Takahiro Kozeki, Afzaal Qamar, Takahiro Namazu, Hoang-Phuong Phan
Publikováno v:
2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO).
In this work, we present the design and fabrication of high-frequency SiC nanoresonators for highly sensitive nanoparticle sensing. A 280-nm single crystalline SiC film was grown on a Si wafer, and released from the substrate using an isotropic dry e
Autor:
Tuan-Khoa Nguyen, Nam-Trung Nguyen, Hoang-Phuong Phan, Afzaal Qamar, Takahiro Namazu, Toan Dinh, Takahiro Kozeki, Dzung Viet Dao
This paper presents an innovative nano strain-amplifier employed to significantly enhance the sensitivity of piezoresistive strain sensors. Inspired from the dogbone structure, the nano strain-amplifier consists of a nano thin frame released from the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9d206b2b7710f19fbfe3aea390f68b8e
http://arxiv.org/abs/1607.04531
http://arxiv.org/abs/1607.04531