Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Takahiro Kishioka"'
Autor:
Kamibayashi Satoshi, Endo Yuki, Mizuochi Ryuta, Takahumi Endo, Takahiro Kishioka, Hashimoto Yuto, Ogata Hiroto, Shigetaka Otagiri
Publikováno v:
Journal of Photopolymer Science and Technology. 31:547-553
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a811be9cf3e199fd3d4e5026baafdda
https://doi.org/10.2494/photopolymer.31.547
https://doi.org/10.2494/photopolymer.31.547
Publikováno v:
Colloids and Surfaces B: Biointerfaces. 144:180-187
A self-assembled monolayer (SAM) of a 2-bromoisobutyryl end group-carrying initiator for atom transfer radical polymerization (ATRP) was constructed on the surface of silicon wafer or glass substrates via a silane-coupling reaction. When the initiato
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::20d8e4d26f6214842b309ebd9a7109b1
Autor:
Tamura Mamoru, Takuya Ohashi, Hiroyuki Kuwae, Yuki Usui, Jun Mizuno, Takahiro Kishioka, Takumi Kamibayashi, Shuichi Shoji
Publikováno v:
2018 13th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT).
We developed a fabrication method of high-aspect-ratio fine vias with a build-up resin. The build-up resin composed of a thermosetting resin and silica fillers has low coefficient of thermal expansion and low dielectric constant. Thermal imprint was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6b8f9c031e0ce491cd57429c66858c4
https://doi.org/10.1109/impact.2018.8625825
https://doi.org/10.1109/impact.2018.8625825
Autor:
Tamura Mamoru, Ogata Hiroto, Yuki Usui, Yasushi Sakaida, Hashimoto Yuto, Tomoya Ohashi, Takahiro Kishioka
Publikováno v:
SPIE Proceedings.
In the recent of the semiconductor manufacturing process, variety of properties (narrow gap-filling and planarity etc.) are required to organic BARC in addition to the conventional requirements. Moreover, SC-1 resistance is also needed because BARC i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c12d9613398b9e10623b7bd7f258702
https://doi.org/10.1117/12.2257664
https://doi.org/10.1117/12.2257664
Autor:
Daisuke Maruyama, Akira Kawai, Takayoshi Niiyama, Takashi Matsumoto, Takahiro Kishioka, Yasushi Sakaida, Takahiro Moriuchi
Publikováno v:
Microelectronic Engineering. 83:659-662
The improvement of adhesion property of microresist pattern has been recognized as one important problem that needs to be solved in the nanoscale-device fabrication. As decreasing wavelength of the exposure source for miniaturizing the resist pattern
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16e9d06a746a9f179bb4fa49012647f4
https://doi.org/10.1016/j.mee.2005.12.030
https://doi.org/10.1016/j.mee.2005.12.030
Autor:
Yasuyuki Nakajima, Shigeo Irie, Kiyoshi Fujii, Ken-Ichi Mizusawa, Takahiro Kishioka, Rikimaru Sakamoto, Masato Shigematu
Publikováno v:
Journal of Photopolymer Science and Technology. 17:665-670
We developed NCA660 as a bottom-antireflective-coating (BARC) for 157-nm lithography last year. The NCA660 characteristics, such as the k-value, dry-etching rate, and film thickness loss, were optimized to meet the target for 157-nm lithography. In t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::134ffd0bd1d9f12b09259334b219be04
https://doi.org/10.2494/photopolymer.17.665
https://doi.org/10.2494/photopolymer.17.665
Autor:
Tadashi Nakaji-Hirabayashi, Takahiro Kishioka, Ken-ichi Tokuwa, Lifu Li, Yuki Usui, Hiromi Kitano, Kohji Ohno
Publikováno v:
Macromolecular Materials and Engineering. 302:1600374
A thin layer (around 2 nm in thickness) composed of a random copolymer of zwitterionic carboxymethyl betaine (CMB) and p-trimethoxysilylstyrene (STMS) (9:1) is constructed on a glass substrate or a silicon wafer. The copolymer layer is highly resista
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebe589c8f4b1aa092e5f629357e69b2d
https://doi.org/10.1002/mame.201600374
https://doi.org/10.1002/mame.201600374
Publikováno v:
SPIE Proceedings.
The lithography process for implant layer will be more difficult beyond 22nm node. Current method, TARC/ resist stacks, resist/ DBARC stacks and resist/ BARC with etching process, can't meet manufacture requirement. How to solve this issue will be ve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd47fe972ea69e980312978f92258673
https://doi.org/10.1117/12.916132
https://doi.org/10.1117/12.916132
Autor:
Satoshi Takei, Makoto Nakajima, Hashimoto Keisuke, Yasuyuki Nakajima, Takahiro Sakaguchi, Takahiro Kishioka, Rikimaru Sakamoto, Tomoyuki Enomoto
Publikováno v:
SPIE Proceedings.
Integrated circuit manufacturers are consistently seeking to minimize device feature dimensions in order to reduce chip size and increase integration level. Feature sizes on chips are achieved sub 65nm with the advanced 193nm microlithography process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f1b6dfbc93d5463e83df94d38be49a8
https://doi.org/10.1117/12.656132
https://doi.org/10.1117/12.656132
Autor:
Yoshiomi Hiroi, Takashi Matsumoto, Rikimaru Sakamoto, Sangwoong Yoon, Young-Ho Kim, Sang-Mun Chon, Daisuke Maruyama, Seok Jin Han, Young-Hoon Kim, Yasushi Sakaida, Yasuyuki Nakajima, EunYoung Yoon, Takahiro Kishioka
Publikováno v:
SPIE Proceedings.
We found a new polymer platform for ArF BARC that can be prepared by addition polymerization. This system not only improves resist pattern collapse, but also allows control of the optimum film thickness, and etch rate by combination of compounds, met
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19ff2498295652027cb303df1156d146
https://doi.org/10.1117/12.599421
https://doi.org/10.1117/12.599421