Zobrazeno 1 - 10
of 106
pro vyhledávání: '"Takahiro Gotow"'
Autor:
Kentaro Takakura, Shogo Ito, Junya Sonoda, Koji Tabata, Motoko Shiozaki, Kaoru Nagai, Masahiro Shibata, Masato Koike, Yasuo Uchiyama, Takahiro Gotow
Publikováno v:
Heliyon, Vol 3, Iss 11, Pp e00462- (2017)
The genus Cordyceps and its specific ingredient, cordycepin, have attracted much attention for multiple health benefits and expectations for lifespan extension. We analyzed whether Cordyceps militaris (CM), which contains large amounts of cordycepin,
Externí odkaz:
https://doaj.org/article/42adf52516bc464c8e18fae69b3dfcc2
Autor:
Takahiro Gotow, Sachie Fujikawa, Hiroki I. Fujishiro, Mutsuo Ogura, Wen Hsin Chang, Tetsuji Yasuda, Tatsuro Maeda
Publikováno v:
AIP Advances, Vol 7, Iss 10, Pp 105117-105117-5 (2017)
A clean and flat GaSb surface without native oxides has been attained by H2 plasma cleaning and subsequent in-situ N2 plasma nitridation process at 300 oC. The mechanisms of thermal desorption behavior of native oxides on GaSb have been studied by th
Externí odkaz:
https://doaj.org/article/5663aacadecb4c53aee4bbfb30bdd68e
Autor:
Yasuyuki Miyamoto, Takahiro Gotow
Publikováno v:
IEEJ Transactions on Electronics, Information and Systems. 142:348-353
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee38ca4f04480cc626f7a5e28131ad74
https://doi.org/10.1541/ieejeiss.142.348
https://doi.org/10.1541/ieejeiss.142.348
Autor:
Takahiro, GOTOW
Publikováno v:
大阪河﨑リハビリテーション大学紀要 = Journal of Osaka Kawasaki Rehabilitation University. 16:9-25
Review Article
レスベラトロールはブドウの果皮に多いポリフェノールで、 ブドウを丸ごと使用して作られる赤ワインにも多い。 レスベラトロールは寿命を延ばす遺伝子(サーチュイン)
レスベラトロールはブドウの果皮に多いポリフェノールで、 ブドウを丸ごと使用して作られる赤ワインにも多い。 レスベラトロールは寿命を延ばす遺伝子(サーチュイン)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::5451aa27fe3c2b1d3a7d24f098ed03f3
http://id.nii.ac.jp/1664/00000295/
http://id.nii.ac.jp/1664/00000295/
Publikováno v:
JPN. J. APPL. PHYS.. 62
In this study, AlGaN/GaN high-electron-mobility transistors with 65 and 38 nm channel layers and back-barrier layers were fabricated. The isolation process resulted in damage related to the thickness of the channel layer, which deteriorated propertie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::adebd97e993af9469b2d2ae9fba8d9be
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100887487
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100887487
Publikováno v:
PharmaNutrition. 24:100337
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ce33dd0ce77e19b348c3393716b6bf7
https://doi.org/10.1016/j.phanu.2023.100337
https://doi.org/10.1016/j.phanu.2023.100337
Autor:
Takahiro Gotow, Yasuyuki Miyamoto
Publikováno v:
IEICE Transactions on Electronics. :304-307
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::73a293f22580e9e91edc4eabaa04b4e3
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100830305
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100830305
Autor:
Dae-Hwan Ahn, Tae-Eon Bae, Kimihiko Kato, Kasidit Toprasertpong, Takahiro Gotow, Mitsuru Takenaka, Shinichi Takagi, Ryotaro Takaguchi
Publikováno v:
ECS Transactions. 92:59-69
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2dd5ee362a0afcfe335a4cad7db10440
https://doi.org/10.1149/09204.0059ecst
https://doi.org/10.1149/09204.0059ecst
Autor:
Yasuyuki Miyamoto, Shigeki Yoshida, Akihiro Hayasaka, Isao Makabe, Takahiro Gotow, Tomoya Aota
Publikováno v:
Japanese Journal of Applied Physics. 60(SCCF06)
Electrodeless photo-assisted electrochemical etching was performed in an N-polar GaN high-electron-mobility transistor to obtain device isolation with a flat wet etching surface. The root mean square roughness of the surface after 30 nm etching was 3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::44d6615bc90bdb1f2419fb7eb494d8ad
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100845762
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100845762
Autor:
Takahiro Gotow, Chih-Yu Chang, Dae-Hwan Ahn, Mitsuru Takenaka, Kimihiko Kato, Shinichi Takagi, Chiaki Yokoyama, Kiyoshi Endo
Publikováno v:
ECS Transactions. 85:27-37
The technical challenges and viable technologies of tunneling MOSFETs (TFET) using III-V semiconductors are present in this paper. Device engineering indispensable in improving the performance of TFETs is summarized. In particular, the electrical cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6ab0846db9e0a1b5b3c99027ff37f93
https://doi.org/10.1149/08508.0027ecst
https://doi.org/10.1149/08508.0027ecst